2SD2150

S MD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +0.1 0.48-0.1 1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=30V VEB=5V 0.2 180 290 25 Testconditons Min 40 20 6 0.1 0.1 0.5 560 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=2A, IB=0.1A hFE fT Cob VCE=2V, IC=0.1A VCE=2V, IE= -0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE R 180 390 CF S 270 560 +0.1 -0.1 www.kexin.com.cn 1