2SD2150

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR SOT-89-3L (NPN) FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =50uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE * Collector-emitter saturation voltage VCE(sat) Transition frequency fT* Collector output capacitance Cob VCE=2V, IC=100mA * 180 560 IC=2A, IB=100mA VCE=2V,IC=500mA f=100MHz VCB=10V, IE=0, f=1MHz 0.5 V 290 MHz 25 pF *Pulse test: tp≤300μS, δ≤0.02. CLASSIFICATION OF hFE Rank Range Marking R S 180-390 270-560 CFR CFS B,Nov,2011 Typical Characteristics 1000 500uA 160 IC IC hFE 400uA —— COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 450uA 350uA 120 300uA 250uA 80 200uA 150uA 40 Ta=100℃ DC CURRENT GAIN (mA) hFE Static Characteristic 200 COLLECTOR CURRENT 2SD2150 Ta=25℃ 100uA IB=50uA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1200 —— VCE 100 5 IC Ta=25℃ 600 Ta=100℃ 400 100 COLLECTOR CURRENT IC 3000 —— IC 1000 1000 IC —— 3000 (mA) IC 100 Ta=100℃ Ta=25℃ 10 β=20 β=20 10 100 VCEsat 1000 800 1 10 COLLECTOR CURRENT 1000 200 0.1 1 (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 0 1 0.1 0.3 3000 1 10 100 COLLECTOR CURRENT (mA) VBE Cob/ Cib 500 —— IC 1000 3000 (mA) VCB/ VEB VCE=2V f=1MHz IE=0/IC=0 1000 (pF) (mA) Ta=25℃ IC Ta=100℃ COLLCETOR CURRENT C 100 Cib CAPACITANCE 100 10 Ta=25℃ Cob 1 0.1 0 200 400 600 BASE-EMMITER VOLTAGE fT —— VBE 1 10 REVERSE VOLTAGE (mV) IC PC 600 (MHz) fT TRANSITION FREQUENCY 10 0.1 1000 COLLECTOR POWER DISSIPATION PC (mW) 500 800 100 VCE=2V —— V 20 (V) Ta 500 400 300 200 100 Ta=25℃ 10 2 10 100 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Nov,2011