2SK3224

S MD SMD Type MOS Field Effect Transistor 2SK3224 IC MOSFET Features Low On-State Resistance RDS(on)1 = 40 m RDS(on)2 = 60 m MAX. (VGS = 10 V, ID = 10 A) MAX. (VGS = 4.0 V, ID = 10 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Built-in Gate Protection Diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 Low Ciss : Ciss = 790 pF TYP. 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Symbol VDSS VGSS(AC) VGSS(DC) Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg ID Idp * PD Rating 60 20 +20,-10 20 70 25 1.0 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=10A,VGS(on)=10V,RG=10 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A VGS=4V,ID=10A 1..0 8.0 1.5 15 24 33 790 240 100 19 165 62 71 40 60 Min Typ Max 10 10 2.0 Unit A A V S m m pF pF pF ns ns ns ns 3.80 www.kexin.com.cn 1