AO3409

S MD Type P-Channel Enhancement Mode Field Effect Transistor KO3409(AO3409) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 ID = -2.6 A (VGS = -10V) RDS(ON) < 130m RDS(ON) < 200m (VGS = -10V) (VGS = -4.5V) +0.1 1.3-0.1 VDS (V) = -30V 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case Junction and Storage Temperature Range RthJA RthJC TJ, TSTG IDM PD Symbol VDS VGS ID Rating -30 20 -2.6 -2.2 -20 1.4 1 100 63 -55 to 150 /W /W W A Unit V V www.kexin.com.cn 1 SMD Type KO3409(AO3409) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250 A, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V ,TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=-250 A VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance rDS(ON) VGS=-10V, ID=-2.6A VGS=-4.5V, ID=-2A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS VSD IS=-1A,VGS=0V IF=-2.6A, dI/dt=100A/ IF=-2.6A, dI/dt=100A/ s s VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3 ID(ON) gfs Ciss Coss Crss Rg Qg VGS=-4.5V, VDS=-15V, ID=-2.6A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz VGS=-4.5V, VDS=-5V VDS=-5V, ID=-5A -5 3 TJ=125 -1 Min -30 MOSFET Typ Max Unit V -1 -5 100 -1.9 97 135 166 -3 130 150 200 A nA V m m A 3.8 302 50.3 37.8 12 6.8 2.4 1.6 0.95 7.5 3.2 17 6.8 16.8 10 -2 -0.82 -1 22 18 9 nC nC nC nC ns ns ns ns ns nC A V 370 S pF pF pF * Repetitive rating, pulse width limited by junction temperature. 2 www.kexin.com.cn