AO3409

AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering option. AO3409 and AO3409L are electrically identical. Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 200mΩ (VGS = -4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -2.6 -2.2 -20 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3409 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-2A Forward Transconductance VDS=-5V, ID=-2.5A 3 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -1 -5 97 135 166 3.8 -0.82 -1 -2 302 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 50.3 37.8 12 6.8 VGS=-10V, VDS=-15V, ID=-2.6A 2.4 1.6 0.95 7.5 VGS=-10V, VDS=-15V, RL=5.8Ω, RGEN=3Ω IF=-2.6A, dI/dt=100A/ µs 3.2 17 6.8 16.8 10 22 18 9 370 130 150 200 -1.9 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/ µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -ID (A) -8V 8 -6V 6 10 -5.5V -5V VGS=-4.5V 5 -4V -3.5V -3.0V 0 1 2 3 4 5 -ID(A) 125°C 4 2 0 1 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=-10V 25°C 10 VDS=-5V 0 -VDS (Volts) Fig 1: On-Region Characteristics 250 370 18 VGS=-4.5V 200 RDS(ON) (mΩ ) 1.4 9 150 VGS=-4.5V 1.2 ID=-2A 1 100 VGS=-10V 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-2A RDS(ON) (mΩ ) 200 0.8 0 25 50 75 100 125 22 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 125°C 150 100 50 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1.0E-02 125°C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C Alpha & Omega Semiconductor, Ltd. AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9 8 7 -VGS (Volts) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 500 VDS=-15V ID=-2.6A Capacitance (pF) 400 Ciss 300 200 100 Coss Crss 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 370 100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s 100µs 1ms 10ms 20 TJ(Max)=150°C 18 TA=25°C 15 Power (W) 10µs -ID (Amps) 10.0 9 10 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 22 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.