AO3414

SMD S MD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V) = 20V +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 RDS(ON) RDS(ON) 63m 87m (VGS = 2.5V) (VGS = 1.8V) 0.55 RDS(ON) 50m (VGS = 4.5V) +0.1 1.3-0.1 ID = 4.2A (VGS=4.5V) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD RthJA RthJC TJ, TSTG Symbol VDS VGS ID Rating 20 8 4.2 3.2 15 1.4 0.9 125 80 -55 to 150 /W /W W A Unit V V Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Themal Resistance.Junction-to-Ambient *1 Themal Resistance.Junction-to-Case Junction and Storage Temperature Range *1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 www.kexin.com.cn 1 SMD Type KO3414(AO3414) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250ìA, VGS=0V VDS=16V, VGS=0V VDS=16V, VGS=0V ,TJ=55 VDS=0V, VGS= 8V 0.4 Min 20 MOSFET IC Typ Max Unit V 1 A 5 100 0.6 41 TJ=125 58 52 67 15 11 436 1 50 70 63 87 A S pF pF pF m nA V VDS=VGS ID=250ìA VGS=4.5V, ID=4.2A Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=4.2A VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off FallTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS VSD VGS=4.5V, VDS=5V VDS=5V, ID=4.2A VGS=0V, VDS=-10V, f=1MHz 66 44 VGS=0V, VDS=0V, f=1MHz 3 6.2 nC nC nC ns ns ns ns ns nC 2 A V VGS=4.5V, VDS= =10V, ID=4.2A 1.6 0.5 5.5 VGS=4.5V, VDS=10V, RL=2.7Ù,RGEN=6Ù 6.3 40 12.7 IF=4A, dI/dt=100A/ IF=4A, dI/dt=100A/ s s 12.3 3.5 IS=1A,VGS=0V 0.76 1 2 www.kexin.com.cn