BAS125W

S MD Type Silicon Schottky Diodes BAS125W;BAS125-04W BAS125-05W;BAS125-06W Diodes Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Surge forward current ( t Total Power dissipation Junction tem perature Storage tem perature Junction am bient BAS125W ( Note 1) 06W ( Note 1) 10m s) TS 25 Sym bol VR IF I FSM P tot Tj T stg R thJA R thJA R thJS 06W R thJS Value 25 100 500 250 150 -50 to +150 310 425 230 265 K/W K/W K/W K/W Unit V mA mA mW Junction am bient BAS125-04W Junction - soldering point BAS125W Junction - soldering point BAS125-04W Note Package m ounted on alum ina 15m m 16.7m m m 0.7m m Electrical Characteristics Ta = 25 Parameter Reverse current Symbol IR Test Conditions VR = 20 V VR = 25 V IF = 1 mA Forward voltage VF IF = 10 mA IF = 35 mA Diode capacitance Differential forward resistance CT RF VR = 0 V, f = 1 MHz IF = 5 mA, f = 10 KHz 16 385 530 800 Min Typ Max 150 200 400 650 900 1.1 pF mV Unit nA Marking Type Marking BAS125W 13s BAS125-04W 14s BAS125-05W 15s BAS125-06W 16s www.kexin.com.cn 1