BAS16T

S MD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Diodes Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 0.55 Features +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Power dissipation Forward Current Reverse Voltage Operating and storage junction temperature range (T a mb =25 ) Symbol PD IF VR T J , T stg Limits 150 75 85 -55 to +150 Unit mW mA V Electrical Characteristics Ta = 25 Param eter Reverse breakdown voltage Reverse voltage leakage current Sym bol V (BR) IR Conditions I R = 100 A Min 85 2 0.03 715 855 1000 1250 1.5 4 pF ns mV Max Unit V A V R =75 V V R =25 V I F =1 m A Forward voltage VF I F =10 m A I F = 50 m A I F =150 m A Diode capacitance Reverse recovery tim e CD t rr V R =0 V,f=1MHz Marking Type Marking BAS16T A2 BAW56T JD BAV70T JJ BAV99T JE +0.05 0.8-0.05 www.kexin.com.cn 1