BAS16T

BAS16T/ BA 5 6T/ BA 70T/BA 99T W V V Plastic-Encapsulate Diodes Elektronische Bauelemente RoHS Compliant Product Surface Mount Switching Diodes A suffix of "-C" specifies halogen & lead-free FEATURES * Fast Switching Speed * For General Purpose Switching Applications * Ultra-Small Surface Mount Package * Also Available in Lead Free Version * High Conductance TO P V I E W B G H K M E BC A C SOT-523 Dim A B C D G H N Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ MECHANICAL DATA * Case: SOT-523, Molded Plastic * Case material: UL Flammability Rating 94V-0 * Moisture sensitvity: Leavel 1 per J-STD-020A * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See Diagrams Below * Weight: 0.002 grams (approx.) * Mounting Position: Any J J K L M N a D L All Dimensions in mm Max i m u m Rat i n g s @ TA = 25 C unless otherwise specified O Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 2) Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation (Note 2) Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range Single diode Double diode Symbol VRRM VRWM VR VR(RMS) IFM IFRM IFSM Pd RθJA Tj , TSTG Value 85 60 15 5 75 50 0 0.5 150 83 3 -65 to +150 Unit V V mA mA A mW o C/W o C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) @ TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 85 ¾ Max ¾ 0.715 0.855 1.0 1.25 2.0 100 60 30 1.5 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 100mA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 25V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Leakage Current (Note 1) Typical Total Capacitance Reverse Recovery Time N ote s : IR CT trr ¾ ¾ ¾ 1 . Short duration test pulse to minimize self-heating effect. 2 . Device mounted on FR-4 PC board with recommended pad layout. http://www.SeCoSGmbH.com Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 1 of 2 BAS16T/ BA 5 6T/ BA 70T/BA 99T W V V Plastic-Encapsulate Diodes Elektronische Bauelemente Surface Mount Switching Diodes Marking BAS16T Marking: A2 BAW 56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Typical Characteristics 300 BAS16T/BAW56T/BAV70T/BAV99T IF, INSTANTANEOUS FORWARD CURRENT (A) 1 250 IF, FORWARD CURRENT (mA) 200 Single diode loaded 0.1 TA = 150ºC TA = 75ºC TA = 25ºC TA = 0ºC TA = -40ºC 150 100 Double diode loaded 0.01 50 0 0 50 100 150 200 0.001 0 0.5 1.0 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 150ºC TA = 125ºC 2.0 1.8 CT, TOTAL CAPACITANCE (pF) f = 1.0MHz 1000 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100 TA = 75ºC 10 TA = 25ºC TA = 0ºC 1 TA = -40ºC 0.1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0.0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 2 of 2