BAT62-08S

S MD Type Silicon Schottky Diode BAT62-08S;BAT62-09S Diodes SOT-363 +0.1 1.3-0.1 0.65 Unit: mm Features Low barrier diode for detectors up to GHz frequencies +0.15 2.3-0.15 0.525 0.36 Absolute Maxim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation; T S Junction tem perature Storage tem perature range Junction - soldering point 1) BAT62-08S BAT62-09S Note 1.For calculation of R thJA please refer to Application Note Therm al Resistance R thJS 450 tbd K/W 105 Sym bol V RM VR I FM Tj T stg Rating 40 20 100 150 -55 to +150 Unit V V mA Electrical Characteristics T a = 25 Param eter Reverse current Forward voltage Forward voltage m atching Note 2.ÄVF is the difference between lowest and highest VF in a m ultiple diode com ponent. 2) Sym bol IR VF ÄV F Conditions V R = 40 V IF = 2 m A IF = 2 m A Min Typ +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 Max 10 Unit A V mV 0.58 1 20 Marking Type Marking BAT62-08S 62s BAT62-09S 69s +0.1 1.25-0.1 www.kexin.com.cn 1