FCX1051A

S MD Type Transistors NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance. RCE(sat) 57mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating 150 40 5 10 3 1 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FCX1051A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=120V VCE=120V VEB=4V Testconditons Transistors Min 150 40 5 Typ Max Unit V V V 0.3 0.3 0.3 17 85 140 170 250 880 840 290 270 270 130 40 440 450 360 220 55 155 27 220 540 10 10 10 25 120 180 250 340 1000 950 1200 - nA nA nA Collector-emitter saturation voltage * IC=0.2A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=2A, IB=20mA IC=3A, IB=40mA IC=5A, IB=100mA VBE(sat) IC=3A, IB=40mA VBE(on) IC=3A, VCE=2V IC=10mA, VCE=2V IC=1A,VCE=2V IC=3A,VCE=2V IC=5A,VCE=2V IC=10A,VCE=2V IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=3A, VCC=10V IB1=IB2=30mA mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV Static Forward Current Transfer Ratio* hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz 40 pF ns ns Marking Marking 051 2 www.kexin.com.cn