HR1A4A

S MD Type Digital Transistors HR1A4A Transistors Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Total Power Dissipation Junction temperature Storage temperature *1 PW 10ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) IC(pulse) *1 IB(DC) PT *2 Tj Tstg Rating -60 -60 -10 -1.0 -2.0 -0.02 2.0 150 -55 to +150 Unit V V V A A A W *2 When 0.7mm x 16cm2 ceramic board is used. Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Symbol ICBO Testconditons VCB = -60V, IE = 0 VCE = -2.0V , IC = -0.1A DC Current Gain hFE * VCE = -2.0V , IC = -0.5A VCE = -2.0V , IC = -1.0A Collector Saturation Voltage Low Level Input Voltage Input Resistance Emitter-Base Resistance * PW 350 s, Duty Cycle 2% VCE(sat) * IC = -500mA, IB = -10mA VIL * R1 R2 7 10 13 k VCE = -5.0V, IC = -100 A -0.3 150 100 50 0.20 0.35 -1.5 V V Min Typ Max -100 Unit nA www.kexin.com.cn 1 SMD Type HR1A4A Marking Marking MX Transistors Equivalent Circuit Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type HR1A4A Transistors www.kexin.com.cn 3