HR1A4A

DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive PACKAGE DRAWING (UNIT: mm) HR1 SERIES LISTS Products HR1A3M HR1F3P HR1L3N HR1A4, HR1L2Q HR1F2Q HR1A4A Marking MP MQ MR MS MT MU MX R1 (KΩ) 1.0 2.2 4.7 10 0.47 0.22 − R2 (KΩ) 1.0 10 10 10 4.7 2.2 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT ** Tj Tstg Ratings −60 −60 −10 −1.0 −2.0 −0.02 2.0 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % ** When 0.7 mm × 16 cm ceramic board is used 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16184EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 HR1 SERIES +5$0 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 50 100 50 −0.4 −0.3 0.7 0.7 1.0 1.0 1.3 1.3 Unit nA − − − V V kΩ kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.4 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  +5)3 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 100 50 −0.3 −0.3 1.54 7 2.2 10 2.86 13 Unit nA − − − V V kΩ kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.3 A VCE = –5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  +5/1 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 100 50 −0.3 −0.3 3.29 7 4.7 10 6.11 13 Unit nA − − − V V kΩ kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.2 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤   'DWD 6KHHW '(-9'6 HR1 SERIES +5$0 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 100 50 −0.2 −0.3 7 7 10 10 13 13 Unit nA − − − V V kΩ kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.1 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  +5/4 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 100 50 −0.55 −0.3 329 3.29 470 4.7 611 6.11 Unit nA − − − V V Ω kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.5 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  +5)4 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 100 100 50 −0.55 −0.3 154 1.54 220 2.2 286 2.86 Unit nA − − − V V kΩ kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.5 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  'DWD 6KHHW '(-9'6  HR1 SERIES +5$$ (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 100 50 0.20 −0.3 − 7 − 10 0.35 −1.5 − 13 Unit nA − − − V V Ω kΩ VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A IC = −500 mA, IB = −10 mA VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤   'DWD 6KHHW '(-9'6 HR1 SERIES 7