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KI4562DY

KI4562DY

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KI4562DY - N- and P-Channel 2.5-V (G-S) MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KI4562DY 数据手册
SMD S MD Type N- and P-Channel 2.5-V (G-S) MOSFET KI4562DY IC IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 20 12 7.1 5.7 40 1.7 2 1.3 -55 to 150 62.5 /W P-Channel -20 12 6.2 4.9 40 -1.7 Unit V V A A A A W W www.kexin.com.cn 1 SMD Type KI4562DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -20V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.52 V, ID = -6.2A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 4.5V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ IF = -1.7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 25 22 6.5 7 4 3.5 40 27 40 32 90 95 40 45 40 40 60 50 60 50 150 150 60 70 80 80 20 -20 0.019 0.025 0.027 0.033 0.025 0.035 0.040 0.050 27 20 1.2 -1.2 50 35 Min 0.6 -0.6 100 100 1 -1 5 -5 Typ Max IC IC Unit V nA A A VGS = 4.5 V, ID = 7.1A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -6.2A VGS = 2.5 V, ID = 6.0A VGS = -2.5 V, ID = -5.0A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 10 V, ID = 7.1A VDS = -10 V, ID = -6.2A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5V, ID = 7.1A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn
KI4562DY 价格&库存

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