LT5517EUF#TRPBF

LT5517 40MHz to 900MHz Quadrature Demodulator U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7° Noise Figure: 12.4dB at 800MHz Conversion Gain: 3.3dB at 800MHz Baseband Bandwidth: 130MHz Single Ended, 50Ω Matched 2XLO Input Shutdown Mode 16-Lead QFN (4mm × 4mm) Package with Exposed Pad U APPLICATIO S ■ ■ ■ Wireless Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator The LT®5517 is a 40MHz to 900MHz quadrature demodulator optimized for high linearity receiver applications where high dynamic range is important. It is suitable for communications receivers where an RF or IF signal is directly converted into I and Q baseband signals with a bandwidth up to 130MHz. The LT5517 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, broadband quadrature generator derived from an on-chip divide-by-two circuit. The superior linearity and low noise performance of the LT5517 is achieved across its full frequency range. A wellbalanced divide-by-two circuit generates precision quadrature LO carriers to drive the I mixer and the Q mixer. Consequently, the outputs of the I-channel and the Q-channel are well matched in amplitude, and their phases are 90° apart. The LT5517 also provides excellent 50Ω impedance matching at the 2XLO port across its entire frequency range. , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO I/Q Output Power, IM3, IM2 vs RF Input Power 5V BPF LNA VCC RF + 20 LT5517 IOUT+ LPF 0 VGA 0° RF – IOUT– DSP 2xLO INPUT 2xLO QOUT+ VGA 90° ENABLE EN LPF ÷2 POUT, IM3, IM2 (dBm/TONE) BPF POUT –20 TA = 25°C P2XLO = –10dBm –40 f2XLO = 1602MHz fRF1 = 799.9MHz fRF2 = 800.1MHz –60 IM3 IM2 –80 QOUT– 5517 F01 Figure 1. High Signal-Level I/Q Demodulator for 450MHz Infrastructure Receiver –100 –18 –14 –10 –6 –2 RF INPUT POWER (dBm) 2 5517 F01b 5517f 1 LT5517 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART NUMBER QOUT – QOUT + IOUT – IOUT + TOP VIEW 16 15 14 13 GNDRF 1 RF + 2 RF – LT5517EUF 12 VCC 11 GND 17 3 10 2XLO GNDRF 4 6 7 8 VCC VCC VCC 9 5 EN Power Supply Voltage ............................................ 5.5V Enable Voltage ....................................................0V, VCC 2XLO Voltage (10dBm Equivalent) .......................... ±1V RF + to RF – Differential Voltage (10dBm Equivalent) ................................................. ±2V Operating Ambient Temperature ..............–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Maximum Junction Temperature .......................... 125°C GND UF PART MARKING UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB 5517 TJMAX = 125°C, θJA = 37°C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. AC ELECTRICAL CHARACTERISTICS TA = 25°C. VCC = 5V, EN = VCC, fRF1 = 799.9MHz, fRF2 = 800.1MHz, f2XLO = 1602MHz, P2XLO = –10dBm, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2) PARAMETER CONDITIONS MIN TYP MAX UNITS RF Frequency Range 40 to 900 2XLO Frequency Range 80 to 1800 MHz –15 to 0 dBm 2XLO Power 2XLO Port Return Loss Internally Matched to a 50Ω Source Conversion Gain Voltage Gain, Load Impedance = 1kΩ Gain Variation vs Temperature –40°C to 85°C MHz 20 0 Noise Figure dB 3.3 dB 0.01 dB/°C 12.4 dB Input 3rd Order Intercept 2-Tone, –10dBm/Tone, ∆f = 200kHz 21 dBm Input 2nd Order Intercept 2-Tone, –10dBm/Tone, ∆f = 200kHz 58 dBm 10 dBm Input 1dB Compression Baseband Bandwidth 130 I/Q Gain Mismatch (Note 4) –0.3 I/Q Phase Mismatch (Note 4) –3.5 Output Impedance Differential MHz 0.03 0.3 dB 0.7 3.5 deg 120 Ω 2XLO to RF Leakage –69 dBm LO to RF Leakage –80 dBm RF to 2XLO Isolation 63 dB 5517f 2 LT5517 DC ELECTRICAL CHARACTERISTICS PARAMETER TA = 25°C. VCC = 5V unless otherwise noted. CONDITIONS MIN Supply Voltage TYP 4.5 Supply Current 70 MAX UNITS 5.25 V 90 110 mA Shutdown Current EN = LOW 0.1 20 µA Turn-On Time (Note 5) 200 ns Turn-Off Time (Note 5) 300 ns EN = HIGH (On) 1.6 V EN = LOW (Off) EN Input Current VENABLE = 5V Output DC Offset Voltage (IOUT+ – IOUT–, QOUT+ – QOUT–) fLO = 1602MHz, PLO = –10dBm Output DC Offset Variation vs Temperature – 40°C to 85°C 1.3 V 30 mV µA 2 0.5 7 Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Tests are performed as shown in the configuration of Figure 2. Note 3: Specifications over the – 40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process control. µV/°C Note 4: Measured at P2XLO = –10dBm and output frequency = 1MHz. Note 5: Turn ON and Turn OFF times are based on rise and fall times of the output baseband voltage with RF input power of –10dBm. U W TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency Supply Current vs Supply Voltage IIP2 vs RF Input Frequency 80 25 110 IIP3 80 TA = 25°C TA = –40°C 70 60 4.5 20 15 70 P2XLO = –10dBm VCC = 5V TA = 25°C IIP2 (dBm) 90 TA = 85°C GAIN (dB), NF (dB), IIP3 (dBm) SUPPLY CURRENT (mA) 100 NF 10 5 CONV GAIN 5.5 5517 G01 60 50 40 30 0 5 4.75 5.25 SUPPLY VOLTAGE (V) P2XLO = –10dBm VCC = 5V TA = 25°C 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G02 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G03 5517f 3 LT5517 U W TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) I/Q Output Power, IM3 vs RF Input Power P2XLO = –10dBm 0.60 fBB = 1MHz VCC = 5V GAIN MISMATCH (dB) 0 OUTPUT POWER –20 –40 IM3 –60 0.40 0.20 0 –0.20 –0.40 TA = 85°C TA = 25°C TA = –40°C –80 –100 –18 –14 TA = 85°C TA = 25°C TA = –40°C –0.60 –10 –6 –2 RF INPUT POWER (dBm) 2 –0.80 5517 G04 14 fRF1 = 799.9MHz fRF2 = 800.1MHz TA = 25°C VCC = 5V 10 fRF = 200MHz 8 fRF = 40MHz 4.75 5 5.25 SUPPLY VOLTAGE (V) 4 –15 5.5 65 –60 –70 TA = 85°C LO-RF LEAKAGE (dBm) 60 TA = 25°C TA = –40°C 50 45 –12 –6 –3 –9 2XLO INPUT POWER (dBm) –12 –9 –3 –6 2XLO INPUT POWER (dBm) 0 5517 G10 –12 –9 –6 –3 2XLO INPUT POWER (dBm) 2XLO-RF Leakage vs 2XLO Input Power –60 –70 f2XLO = 1600MHz –80 f2XLO = 800MHz –90 –120 –15 TA = 25°C VCC = 5V –80 f2XLO = 1600MHz f2XLO = 800MHz –90 –100 f2XLO = 80MHz –12 –9 –6 –3 2XLO INPUT POWER (dBm) 0 5517 G09 TA = 25°C VCC = 5V –110 35 30 –15 CONV GAIN 0 –15 0 –100 40 TA = 85°C TA = 25°C TA = –40°C 8 LO-RF Leakage vs 2XLO Input Power f2XLO = 1602MHz VCC = 5V 55 12 5517 G08 IIP2 vs 2XLO Input Power 70 16 IIP3 f2XLO = 1602MHz VCC = 5V fRF1 = 799.9MHz fRF2 = 800.1MHz 4 5517 G07 IIP2 (dBm) 20 6 CONV GAIN 0 4.5 5517 G06 fRF = 800MHz 8 4 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) CONV GAIN (dB), IIP3 (dBm) TA = 85°C TA = 25°C TA = –40°C 12 TA = 85°C TA = 25°C TA = –40°C –4 24 fRF = 400MHz IIP3 16 –2 Conv Gain, IIP3 vs 2XLO Input Power 12 20 0 NF vs 2XLO Input Power NF (dB) CONV GAIN (dB), IIP3 (dBm) 24 f2XLO = 1602MHz VCC = 5V 2 5517 G05 Conv Gain, IIP3 vs Supply Voltage 28 P2XLO = –10dBm fBB = 1MHz 4 VCC = 5V –6 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 0 2XLO-RF LEAKAGE (dBm) POUT, IM3 (dBm/TONE) 6 0.80 f2XLO = 1602MHz fRF1 = 799.9MHz VCC = 5V fRF2 = 800.1MHz PHASE MISMATCH (DEGREE) 20 I/Q Phase Mismatch vs RF Input Frequency I/Q Gain Mismatch vs RF Input Frequency f2XLO = 80MHz –110 0 5517 G11 –120 –15 –12 –9 –6 –3 2XLO INPUT POWER (dBm) 0 5517 G12 5517f 4 LT5517 U W TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) 6 120 4 fRF = 40MHz 100 CONV GAIN (dB) RF-LO ISOLATION (dB) 110 RF, 2XLO Port Return Loss vs Frequency Conv Gain vs Baseband Frequency 90 80 fRF = 400MHz 0 f2XLO = 1602MHz VCC = 5V TA = –40°C 2 TA = 25°C –5 RETURN LOSS (dB) RF-LO Isolation vs RF Input Power TA = 85°C 0 70 fRF = 800MHz 60 –2 TA = 25°C VCC = 5V 50 –15 –10 –5 0 5 10 RF INPUT POWER (dBm) –4 0.1 –10 RF –15 LO –20 1 10 100 BASEBAND FREQUENCY (MHz) 5517 G13 1000 5517 G14 –25 0 0.40 1.20 1.60 0.80 FREQUENCY (GHz) 2 5517 G15 U U U PI FU CTIO S GNDRF (Pins 1, 4): Ground Pins for RF Termination. These pins are not internally connected, and should be connected to the PCB ground plane for best RF isolation. RF+, RF– (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 2.30V. These two pins should be DC blocked when connected to ground or other matching components. The inputs can be terminated in a singleended configuration, but differential input drive is preferred for best performance. An external matching network is required for impedance transformation. EN (Pin 5): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. VCC (Pins 6, 7, 8, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1µF capacitors. 2XLO (Pin 10): 2XLO Input Pin. This pin is internally biased to 1V. The input signal’s frequency should be twice that of the desired demodulator LO frequency. The pin should be AC coupled with an external DC blocking capacitor. QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. Exposed Pad (Pin 17): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane. GND (Pins 9, 11): Ground Pins. These pins are internally tied together and to the Exposed Pad. They should be connected to the PCB ground plane. 5517f 5 LT5517 W BLOCK DIAGRA VCC VCC VCC VCC 6 7 8 12 I-MIXER 16 IOUT+ 15 IOUT– 0° RF AMP RF + LPF 2 LO BUFFERS RF – 3 ÷2 90° LPF 14 QOUT+ 13 QOUT– Q-MIXER BIAS 5 EN 9 11 17 GND GND EXPOSED PAD 10 5517 BD 2XLO 5517f 6 LT5517 TEST CIRCUIT J3 J5 IOUT– C15 10pF QOUT+ C14 10pF J4 J6 3 4 RF + RF QOUT – GNDRF LT5517 – 2XLO GNDRF C2 1nF VCC GND GND VCC 2 VCC C10 3.3pF VCC 1 RF QOUT + C1 T1 MABAES0054 1nF IOUT + R2 0Ω QOUT– C13 10pF 16 15 14 13 EN J1 C16 10pF IOUT – IOUT+ 5 6 7 8 12 C12 1nF 11 10 J2 2XLO 9 C11 1nF 17 VCC EN C5 1nF R1 100k REFERENCE DESIGNATION C1,C2,C5,C11,C12 C3 C4 C10 C13 TO C16 R1 R2 T1 VALUE 1nF 0.1µF 2.2µF 3.3pF 10pF 100k 0Ω 1:4 SIZE 0603 0603 0603 0603 0805 0603 0603 C3 0.1µF C4 2.2µF PART NUMBER AVX 06033A102JAT1A TAIYO YUDEN EMK107B TAIYO YUDEN JMK107B AVX 06033A3R3KAT2A AVX 08055A100ZAT1A OPTIONAL JUMPER, OPTIONAL M/A COM MABAES0054 5517 F02 Figure 2. Evaluation Circuit Schematic Figure 3. Component Side Silkscreen of Evaluation Board Figure 4. Component Side Layout of Evaluation Board 5517f 7 LT5517 U W U U APPLICATIO S I FOR ATIO The LT5517 is a direct I/Q demodulator targeting high linearity receiver applications. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. of the receiver are similar to those of the transformercoupled demo board, because the single-ended to differential conversion has a 1:4 impedance transformation, similar to the transformer. The RF signal is applied to the inputs of the RF amplifier, and is then demodulated into I-channel and Q-channel baseband signals using precision quadrature LO signals, which are internally generated using a divide-by-two circuit. The demodulated I/Q signals are lowpass filtered internally with a –3dB bandwidth of 130MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude and their phases are 90° apart across the full frequency range from 40MHz to 900MHz. Table 1. The Component Values of Matching Network LSH, CS1 and CS2 FREQUENCY (MHz) LSH (nH) CS1, CS2 (pF) 40 437 71.1 100 169 28.6 200 80.8 14.3 300 51.5 9.6 400 37 7.2 500 28.3 5.8 600 22.6 4.9 700 18.5 4.2 800 15.6 3.7 900 13.5 3.3 RF Input Port Differential drive is recommended for the RF inputs as shown in Figure 2. A low loss 1:4 transformer is used on the demonstration board for a wide bandwidth input impedance match and to assure good noise figure and maximum demodulator gain. Single-ended to differential conversion can also be implemented using narrowband L-C circuits to produce the required balanced waveforms at the RF+ and RF– inputs using three discrete elements as shown in Figure 5. Nominal values are listed in Table 1. (In practice, these values should be compensated according to the parasitics of the PCB.) The conversion gain and NF The differential impedance of the RF inputs is listed in Table 2. The RF inputs may also be terminated in a singleended configuration. In this case either the RF+ or the RF– input can be simply AC coupled to a 50Ω source, while the other RF input is connected to ground with a 1nF capacitor. Note, however, that this will result in degraded conversion gain and noise figure in most cases. MATCHING NETWORK CS1 3.7pF RF INPUT TO RF+ CS2 3.7pF LSH 15.6nH TO RF– 5517 F05 Figure 5. RF Input Matching Network at 800MHz 5517f 8 LT5517 U W U U APPLICATIO S I FOR ATIO quadrature Local Oscillator (LO) signals for the demodulator. The on-chip divide-by-two circuit delivers wellmatched, quadrature LO carriers to the I mixer and the Q mixer. Table 2. RF Input Differential Impedance DIFFERENTIAL S11 FREQUENCY (MHz) DIFFERENTIAL INPUT IMPEDANCE (Ω) MAG ANGLE(°) 40 240.1-j10.3 0.665 –0.8 100 245.5-j25.9 0.664 –2.5 200 236.8-j50.0 0.664 –5.1 300 223.6-j70.5 0.663 –7.6 400 207.9-j86.3 0.662 –10.2 500 190.6-j98.1 0.660 –12.7 600 173.2-j105.8 0.657 –15.3 700 156.2-j110.2 0.655 –17.9 800 141.2-j111.8 0.651 –20.4 900 129.5-j114.5 0.650 –22.9 I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60Ω resistor. The output DC bias voltage is VCC – 0.78V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120Ω in parallel with a 10pF internal capacitor, forming a lowpass filter with a –3dB corner frequency at 130MHz. The load impedance, RLOAD, should be larger than 600Ω to assure full gain. The gain is reduced by 20 • log(1 + 120Ω/RLOAD) in dB when the differential output is terminated by RLOAD. For example, the gain is reduced by 6.85dB when each output pin is connected to a 50Ω load (or 100Ω differential loads). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. Proper filtering of the unwanted high frequency mixing product is also important to maintain the highest linearity. A convenient 2XLO Input Port To ease the interface of the receiver with the external 2XLO input, the 2XLO port is designed with on-chip 50Ω impedance matching up to 2GHz. The input is internally biased at 1V. A 1nF DC blocking capacitor is required when connected to the external 2XLO source. The 2XLO frequency is required to be twice the desired operating frequency in order for the chip to generate the LT5517 VCC J1 RF T1 MABAES0054 5 C10 3.3pF 4 C1 1nF 1 2 RF+ 2 250Ω – 3 3 RF 2.30V C2 1nF 5517 F06 Figure 6. RF Input Equivalent Circuit with External Broadband Matching 5517f 9 LT5517 U W U U APPLICATIO S I FOR ATIO approach is to terminate each output with a shunt capacitor. The capacitor value can be optimized depending upon the operating frequency and the specific PCB layout. When AC output coupling is used, the resulting highpass filter’s –3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600Ω. The phase relationship between the I-channel output signal and the Q-channel output signal is fixed. When the LO input frequency is higher than the RF input frequency, then the Q-channel outputs (QOUT+, QOUT–) lead the I-channel outputs (IOUT+, IOUT–) by 90°. Care should be taken when the demodulator’s outputs are DC coupled to the external load to make sure that the I/Q mixers are biased properly. If the current drain from the outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 13mA when connected to an external load with a DC voltage higher than VCC – 0.78V. When the LO input frequency is lower than the RF input frequency, then the Q-channel outputs lag the I-channel outputs by 90°. Note that the phase relationship of the Iand Q-channel outputs relative to the LO can vary by 180°, depending on start-up conditions. This is the nature of a frequency divider-based quadrature phase generator. VCC 60Ω 60Ω 60Ω 60Ω IOUT+ IOUT– 10pF 16 15 + QOUT QOUT– 14 13 10pF 5517 F07 Figure 7. I/Q Output Equivalent Circuit 5517f 10 LT5517 U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ±0.05 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 (UF) QFN 0503 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 5517f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5517 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports Infrastructure RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC®5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to 56dB Linear Power Gain RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones 5517f 12 Linear Technology Corporation LT/TP 0104 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com  LINEAR TECHNOLOGY CORPORATION 2004