LT5517EUF

LT5517 40MHz to 900MHz Quadrature Demodulator FEATURES s s s s s s s s s s s DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7° Noise Figure: 12.4dB at 800MHz Conversion Gain: 3.3dB at 800MHz Baseband Bandwidth: 130MHz Single Ended, 50Ω Matched 2XLO Input Shutdown Mode 16-Lead QFN (4mm × 4mm) Package with Exposed Pad The LT®5517 is a 40MHz to 900MHz quadrature demodulator optimized for high linearity receiver applications where high dynamic range is important. It is suitable for communications receivers where an RF or IF signal is directly converted into I and Q baseband signals with a bandwidth up to 130MHz. The LT5517 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, broadband quadrature generator derived from an on-chip divide-by-two circuit. The superior linearity and low noise performance of the LT5517 is achieved across its full frequency range. A wellbalanced divide-by-two circuit generates precision quadrature LO carriers to drive the I mixer and the Q mixer. Consequently, the outputs of the I-channel and the Q-channel are well matched in amplitude, and their phases are 90° apart. The LT5517 also provides excellent 50Ω impedance matching at the 2XLO port across its entire frequency range. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s Wireless Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator TYPICAL APPLICATIO BPF LNA BPF 5V RF + VCC LT5517 IOUT+ 0° IOUT– LPF VGA RF – 20 0 POUT, IM3, IM2 (dBm/TONE) DSP QOUT+ ÷2 90° ENABLE EN QOUT– 5517 F01 LPF VGA 2xLO INPUT 2xLO Figure 1. High Signal-Level I/Q Demodulator for 450MHz Infrastructure Receiver U I/Q Output Power, IM3, IM2 vs RF Input Power POUT –20 TA = 25°C P2XLO = –10dBm –40 f2XLO = 1602MHz fRF1 = 799.9MHz fRF2 = 800.1MHz –60 –80 –100 –18 IM3 IM2 –14 –10 –6 –2 RF INPUT POWER (dBm) 2 5517 F01b U U 5517f 1 LT5517 ABSOLUTE (Note 1) AXI U RATI GS PACKAGE/ORDER I FOR ATIO TOP VIEW QOUT + QOUT – IOUT + IOUT – VCC VCC UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB TJMAX = 125°C, θJA = 37°C/W VCC Power Supply Voltage ............................................ 5.5V Enable Voltage ....................................................0V, VCC 2XLO Voltage (10dBm Equivalent) .......................... ± 1V RF + to RF – Differential Voltage (10dBm Equivalent) ................................................. ± 2V Operating Ambient Temperature ..............–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Maximum Junction Temperature .......................... 125°C ORDER PART NUMBER 12 VCC 16 15 14 13 GNDRF 1 RF + 2 RF – LT5517EUF 3 17 11 GND 10 2XLO 9 GND GNDRF 4 5 EN 6 7 8 UF PART MARKING 5517 Consult LTC Marketing for parts specified with wider operating temperature ranges. AC ELECTRICAL CHARACTERISTICS PARAMETER RF Frequency Range 2XLO Frequency Range 2XLO Power 2XLO Port Return Loss Conversion Gain Gain Variation vs Temperature Noise Figure Input 3rd Order Intercept Input 2nd Order Intercept Input 1dB Compression Baseband Bandwidth I/Q Gain Mismatch I/Q Phase Mismatch Output Impedance 2XLO to RF Leakage LO to RF Leakage RF to 2XLO Isolation (Note 4) (Note 4) Differential CONDITIONS TA = 25°C. VCC = 5V, EN = VCC, fRF1 = 799.9MHz, fRF2 = 800.1MHz, f2XLO = 1602MHz, P2XLO = – 10dBm, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2) MIN TYP 40 to 900 80 to 1800 –15 to 0 Internally Matched to a 50Ω Source Voltage Gain, Load Impedance = 1kΩ –40°C to 85°C 2-Tone, –10dBm/Tone, ∆f = 200kHz 2-Tone, –10dBm/Tone, ∆f = 200kHz 0 20 3.3 0.01 12.4 21 58 10 130 –0.3 –3.5 0.03 0.7 120 –69 –80 63 0.3 3.5 MAX UNITS MHz MHz dBm dB dB dB/°C dB dBm dBm dBm MHz dB deg Ω dBm dBm dB 2 U 5517f W U U WW W LT5517 DC ELECTRICAL CHARACTERISTICS PARAMETER Supply Voltage Supply Current Shutdown Current Turn-On Time Turn-Off Time EN = HIGH (On) EN = LOW (Off) EN Input Current Output DC Offset Voltage (IOUT+ – IOUT–, QOUT+ – QOUT–) Output DC Offset Variation vs Temperature VENABLE = 5V EN = LOW (Note 5) (Note 5) CONDITIONS TA = 25°C. VCC = 5V unless otherwise noted. MIN 4.5 70 90 0.1 200 300 1.6 1.3 2 0.5 7 30 TYP MAX 5.25 110 20 UNITS V mA µA ns ns V V µA mV µV/°C fLO = 1602MHz, PLO = –10dBm – 40°C to 85°C Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Tests are performed as shown in the configuration of Figure 2. Note 3: Specifications over the – 40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process control. Note 4: Measured at P2XLO = – 10dBm and output frequency = 1MHz. Note 5: Turn ON and Turn OFF times are based on rise and fall times of the output baseband voltage with RF input power of –10dBm. TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency 25 IIP3 TA = 85°C TA = 25°C TA = – 40°C Supply Current vs Supply Voltage 110 GAIN (dB), NF (dB), IIP3 (dBm) 100 SUPPLY CURRENT (mA) 90 15 NF 10 IIP2 (dBm) 80 70 60 4.5 5 4.75 5.25 SUPPLY VOLTAGE (V) UW 5517 G01 IIP2 vs RF Input Frequency 80 P2XLO = –10dBm VCC = 5V TA = 25°C 20 P2XLO = –10dBm VCC = 5V TA = 25°C 70 60 50 5 CONV GAIN 40 0 5.5 30 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G02 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G03 5517f 3 LT5517 TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) I/Q Output Power, IM3 vs RF Input Power 20 0 f2XLO = 1602MHz fRF1 = 799.9MHz VCC = 5V fRF2 = 800.1MHz OUTPUT POWER –20 –40 IM3 –60 –80 –100 –18 TA = 85°C TA = 25°C TA = – 40°C –14 –10 –6 –2 RF INPUT POWER (dBm) 2 5517 G04 POUT, IM3 (dBm/TONE) GAIN MISMATCH (dB) 0.40 0.20 0 –0.20 –0.40 –0.60 –0.80 0 TA = 85°C TA = 25°C TA = – 40°C 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G05 PHASE MISMATCH (DEGREE) Conv Gain, IIP3 vs Supply Voltage 28 24 f2XLO = 1602MHz VCC = 5V fRF1 = 799.9MHz fRF2 = 800.1MHz 14 CONV GAIN (dB), IIP3 (dBm) CONV GAIN (dB), IIP3 (dBm) 20 16 12 8 4 0 4.5 IIP3 TA = 85°C TA = 25°C TA = – 40°C CONV GAIN NF (dB) 4.75 5.25 SUPPLY VOLTAGE (V) 5 IIP2 vs 2XLO Input Power 70 65 60 IIP2 (dBm) f2XLO = 1602MHz VCC = 5V TA = 85°C LO-RF LEAKAGE (dBm) 55 50 45 40 35 30 –15 –12 TA = 25°C TA = – 40°C f2XLO = 1600MHz –80 f2XLO = 800MHz –90 2XLO-RF LEAKAGE (dBm) –3 –6 2XLO INPUT POWER (dBm) –9 4 UW 5517 G07 I/Q Gain Mismatch vs RF Input Frequency P2XLO = –10dBm 0.60 fBB = 1MHz VCC = 5V 0.80 I/Q Phase Mismatch vs RF Input Frequency 6 P2XLO = –10dBm fBB = 1MHz 4 VCC = 5V 2 0 –2 –4 –6 0 100 200 300 400 500 600 700 800 900 RF INPUT FREQUENCY (MHz) 5517 G06 TA = 85°C TA = 25°C TA = – 40°C NF vs 2XLO Input Power TA = 25°C VCC = 5V Conv Gain, IIP3 vs 2XLO Input Power 24 fRF = 800MHz fRF = 400MHz 12 20 16 12 8 4 0 –15 f2XLO = 1602MHz VCC = 5V fRF1 = 799.9MHz fRF2 = 800.1MHz TA = 85°C TA = 25°C TA = – 40°C IIP3 10 fRF = 200MHz fRF = 40MHz 8 6 CONV GAIN 5.5 4 –15 –12 –6 –3 –9 2XLO INPUT POWER (dBm) 0 5517 G08 –12 –9 –6 –3 2XLO INPUT POWER (dBm) 0 5517 G09 LO-RF Leakage vs 2XLO Input Power –60 –70 TA = 25°C VCC = 5V –60 –70 –80 –90 2XLO-RF Leakage vs 2XLO Input Power TA = 25°C VCC = 5V f2XLO = 1600MHz f2XLO = 800MHz –100 –110 f2XLO = 80MHz –100 –110 f2XLO = 80MHz 0 5517 G10 –120 –15 –12 –9 –6 –3 2XLO INPUT POWER (dBm) 0 5517 G11 –120 –15 –12 –9 –6 –3 2XLO INPUT POWER (dBm) 0 5517 G12 5517f LT5517 TYPICAL PERFOR A CE CHARACTERISTICS fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2) RF-LO Isolation vs RF Input Power 120 110 RF-LO ISOLATION (dB) 6 fRF = 40MHz CONV GAIN (dB) 90 80 fRF = 400MHz 70 fRF = 800MHz 60 TA = 25°C VCC = 5V –10 –5 0 5 10 5517 G13 2 TA = 25°C TA = 85°C RETURN LOSS (dB) 100 50 –15 RF INPUT POWER (dBm) PI FU CTIO S GNDRF (Pins 1, 4): Ground Pins for RF Termination. These pins are not internally connected, and should be connected to the PCB ground plane for best RF isolation. RF+, RF– (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 2.30V. These two pins should be DC blocked when connected to ground or other matching components. The inputs can be terminated in a singleended configuration, but differential input drive is preferred for best performance. An external matching network is required for impedance transformation. EN (Pin 5): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. VCC (Pins 6, 7, 8, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1µF capacitors. GND (Pins 9, 11): Ground Pins. These pins are internally tied together and to the Exposed Pad. They should be connected to the PCB ground plane. 2XLO (Pin 10): 2XLO Input Pin. This pin is internally biased to 1V. The input signal’s frequency should be twice that of the desired demodulator LO frequency. The pin should be AC coupled with an external DC blocking capacitor. QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC – 0.78V for each pin. Exposed Pad (Pin 17): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane. UW Conv Gain vs Baseband Frequency f2XLO = 1602MHz VCC = 5V TA = – 40°C RF, 2XLO Port Return Loss vs Frequency 0 4 –5 –10 RF –15 LO –20 0 –2 –4 0.1 1 10 100 BASEBAND FREQUENCY (MHz) 1000 5517 G14 –25 0 0.40 1.20 1.60 0.80 FREQUENCY (GHz) 2 5517 G15 U U U 5517f 5 LT5517 BLOCK DIAGRA W VCC 6 VCC 7 VCC 8 VCC 12 I-MIXER LPF 16 IOUT+ 15 IOUT– ÷2 RF AMP RF + 2 LO BUFFERS RF – 3 90° 0° LPF 14 QOUT+ 13 QOUT– Q-MIXER BIAS 5 EN 9 11 17 10 2XLO 5517 BD GND GND EXPOSED PAD 5517f 6 LT5517 TEST CIRCUIT J3 IOUT– C15 10pF J4 IOUT+ C16 10pF C13 10pF 16 15 14 13 IOUT + IOUT – QOUT + QOUT – J5 C14 10pF J6 QOUT– QOUT+ J1 RF R2 0Ω C10 3.3pF C1 T1 MABAES0054 1nF 1 2 3 4 C2 1nF RF + RF – GNDRF VCC GND 12 11 10 9 C11 1nF 17 VCC C12 1nF J2 2XLO LT5517 2XLO GND VCC VCC VCC GNDRF EN 5 6 EN 7 8 R1 100k C5 1nF C3 0.1µF C4 2.2µF REFERENCE DESIGNATION C1,C2,C5,C11,C12 C3 C4 C10 C13 TO C16 R1 R2 T1 VALUE 1nF 0.1µF 2.2µF 3.3pF 10pF 100k 0Ω 1:4 SIZE 0603 0603 0603 0603 0805 0603 0603 PART NUMBER AVX 06033A102JAT1A TAIYO YUDEN EMK107B TAIYO YUDEN JMK107B AVX 06033A3R3KAT2A AVX 08055A100ZAT1A OPTIONAL JUMPER, OPTIONAL M/A COM MABAES0054 5517 F02 Figure 2. Evaluation Circuit Schematic Figure 3. Component Side Silkscreen of Evaluation Board Figure 4. Component Side Layout of Evaluation Board 5517f 7 LT5517 APPLICATIO S I FOR ATIO The LT5517 is a direct I/Q demodulator targeting high linearity receiver applications. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. The RF signal is applied to the inputs of the RF amplifier, and is then demodulated into I-channel and Q-channel baseband signals using precision quadrature LO signals, which are internally generated using a divide-by-two circuit. The demodulated I/Q signals are lowpass filtered internally with a –3dB bandwidth of 130MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude and their phases are 90° apart across the full frequency range from 40MHz to 900MHz. RF Input Port Differential drive is recommended for the RF inputs as shown in Figure 2. A low loss 1:4 transformer is used on the demonstration board for a wide bandwidth input impedance match and to assure good noise figure and maximum demodulator gain. Single-ended to differential conversion can also be implemented using narrowband L-C circuits to produce the required balanced waveforms at the RF+ and RF– inputs using three discrete elements as shown in Figure 5. Nominal values are listed in Table 1. (In practice, these values should be compensated according to the parasitics of the PCB.) The conversion gain and NF RF INPUT CS2 3.7pF LSH 15.6nH Figure 5. RF Input Matching Network at 800MHz 8 U of the receiver are similar to those of the transformercoupled demo board, because the single-ended to differential conversion has a 1:4 impedance transformation, similar to the transformer. Table 1. The Component Values of Matching Network LSH, CS1 and CS2 FREQUENCY (MHz) 40 100 200 300 400 500 600 700 800 900 LSH (nH) 437 169 80.8 51.5 37 28.3 22.6 18.5 15.6 13.5 CS1, CS2 (pF) 71.1 28.6 14.3 9.6 7.2 5.8 4.9 4.2 3.7 3.3 W UU The differential impedance of the RF inputs is listed in Table 2. The RF inputs may also be terminated in a singleended configuration. In this case either the RF+ or the RF– input can be simply AC coupled to a 50Ω source, while the other RF input is connected to ground with a 1nF capacitor. Note, however, that this will result in degraded conversion gain and noise figure in most cases. MATCHING NETWORK CS1 3.7pF TO RF+ TO RF– 5517 F05 5517f LT5517 APPLICATIO S I FOR ATIO Table 2. RF Input Differential Impedance FREQUENCY (MHz) 40 100 200 300 400 500 600 700 800 900 DIFFERENTIAL INPUT IMPEDANCE (Ω) 240.1-j10.3 245.5-j25.9 236.8-j50.0 223.6-j70.5 207.9-j86.3 190.6-j98.1 173.2-j105.8 156.2-j110.2 141.2-j111.8 129.5-j114.5 MAG 0.665 0.664 0.664 0.663 0.662 0.660 0.657 0.655 0.651 0.650 DIFFERENTIAL S11 ANGLE(°) –0.8 –2.5 –5.1 –7.6 –10.2 –12.7 –15.3 –17.9 –20.4 –22.9 2XLO Input Port To ease the interface of the receiver with the external 2XLO input, the 2XLO port is designed with on-chip 50Ω impedance matching up to 2GHz. The input is internally biased at 1V. A 1nF DC blocking capacitor is required when connected to the external 2XLO source. The 2XLO frequency is required to be twice the desired operating frequency in order for the chip to generate the J1 RF 5 C10 3.3pF 4 Figure 6. RF Input Equivalent Circuit with External Broadband Matching U quadrature Local Oscillator (LO) signals for the demodulator. The on-chip divide-by-two circuit delivers wellmatched, quadrature LO carriers to the I mixer and the Q mixer. I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60Ω resistor. The output DC bias voltage is VCC – 0.78V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120Ω in parallel with a 10pF internal capacitor, forming a lowpass filter with a –3dB corner frequency at 130MHz. The load impedance, RLOAD, should be larger than 600Ω to assure full gain. The gain is reduced by 20 • log(1 + 120Ω/RLOAD) in dB when the differential output is terminated by RLOAD. For example, the gain is reduced by 6.85dB when each output pin is connected to a 50Ω load (or 100Ω differential loads). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. Proper filtering of the unwanted high frequency mixing product is also important to maintain the highest linearity. A convenient LT5517 VCC T1 MABAES0054 1 2 3 C2 1nF RF – W UU C1 1nF 2 RF+ 250Ω 3 2.30V 5517 F06 5517f 9 LT5517 APPLICATIO S I FOR ATIO approach is to terminate each output with a shunt capacitor. The capacitor value can be optimized depending upon the operating frequency and the specific PCB layout. The phase relationship between the I-channel output signal and the Q-channel output signal is fixed. When the LO input frequency is higher than the RF input frequency, then the Q-channel outputs (QOUT+, QOUT–) lead the I-channel outputs (IOUT+, IOUT–) by 90°. When the LO input frequency is lower than the RF input frequency, then the Q-channel outputs lag the I-channel outputs by 90°. Note that the phase relationship of the Iand Q-channel outputs relative to the LO can vary by 180°, depending on start-up conditions. This is the nature of a frequency divider-based quadrature phase generator. VCC 60Ω 60Ω 60Ω 60Ω IOUT+ IOUT– 10pF QOUT + Figure 7. I/Q Output Equivalent Circuit 10 U When AC output coupling is used, the resulting highpass filter’s –3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600Ω. Care should be taken when the demodulator’s outputs are DC coupled to the external load to make sure that the I/Q mixers are biased properly. If the current drain from the outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 13mA when connected to an external load with a DC voltage higher than VCC – 0.78V. 16 15 14 13 QOUT– 10pF 5517 F07 W UU 5517f LT5517 PACKAGE DESCRIPTIO 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ± 0.05 PACKAGE OUTLINE 0.30 ± 0.05 0.65 BSC (UF) QFN 0503 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC 5517f 11 LT5517 RELATED PARTS PART NUMBER Infrastructure LT5511 LT5512 LT5515 LT5516 LT5520 LT5522 High Linearity Upconverting Mixer DC-3GHz High Signal Level Downconverting Mixer 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 600MHz to 2.7GHz High Signal Level Downconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Adjustable Gain and Offset 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to 56dB Linear Power Gain Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Multiband GSM/GPRS/EDGE Mobile Phones DESCRIPTION COMMENTS RF Power Detectors LT5504 LTC®5505 LTC5507 LTC5508 LTC5509 LTC5532 LT5500 LT5502 LT5503 LT5506 LT5546 800MHz to 2.7GHz RF Measuring Receiver RF Power Detectors with >40dB Dynamic Range 100kHz to 1000MHz RF Power Detector 300MHz to 7GHz RF Power Detector 300MHz to 3GHz RF Power Detector 300MHz to 7GHz Precision RF Power Detector 1.8GHz to 2.7GHz Receiver Front End 400MHz Quadrature IF Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 500MHz Quadrature IF Demodulator with VGA 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth RF Power Controller RF Power Controller RF Power Controller SOT-23 RF PA Controller SOT-23 RF PA Controller RF Power Controller for EDGE/TDMA RF Building Blocks RF Power Controllers LTC1757A LTC1758 LTC1957 LTC4400 LTC4401 LTC4403 5517f 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 q FAX: (408) 434-0507 q LT/TP 0104 1K • PRINTED IN USA www.linear.com © LINEAR TECHNOLOGY CORPORATION 2004