LT5519EUF

LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer FEATURES s s s s s s s s s s s s DESCRIPTIO Wide RF Frequency Range: 0.7GHz to 1.4GHz 17.1dBm Typical Input IP3 at 1GHz On-Chip RF Output Transformer On-Chip 50Ω Matched LO and RF Ports Single-Ended LO and RF Operation Integrated LO Buffer: –5dBm Drive Level Low LO to RF Leakage: – 44dBm Typical Noise Figure: 13.6dB Wide IF Frequency Range: 1MHz to 400MHz Enable Function with Low Off-State Leakage Current Single 5V Supply Small 16-Lead QFN Plastic Package The LT®5519 mixer is designed to meet the high linearity requirements of wireless and cable infrastructure transmission systems. A high speed, internally 50Ω matched, LO amplifier drives a double-balanced mixer core, allowing the use of a low power, single-ended LO source. An RF output transformer is integrated, thus eliminating the need for external matching components at the RF output, while reducing system cost, component count, board area and system-level variations. The IF port can be easily matched to a broad range of frequencies for use in many different applications. The LT5519 mixer delivers +17.1dBm typical input 3rd order intercept point at 1GHz with IF input signal levels of –10dBm. The input 1dB compression point is typically +5.5dBm. The IC requires only a single 5V supply. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s s Wireless Infrastructure Cable Downlink Infrastructure Point-to-Point and Point-to-Multipoint Data Communications High Linearity Frequency Conversion TYPICAL APPLICATIO 5VDC 1µF 1000pF 39nH 10 EN BPF 4:1 IF 33pF 100Ω IF – + VCC1 VCC2 VCC3 POUT, IM3, IM2 (dBm/TONE) 220pF 100Ω BIAS LT5519 10pF RF + RF – BPF PA 220pF GND 5pF (OPTIONAL) LO INPUT –5dBm LO+ 85Ω 5pF LO – 5519 F01a Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter 5519f U RF Output Power, IM3 and IM2 vs IF Input Power (Two Input Tones) 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –16 –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5519 F01b U U POUT fRF = 1000MHz PLO = –5dBm fLO = 1140MHz fIF1 = 140MHz fIF2 = 141MHz TA = 25°C IM3 IM2 1 LT5519 ABSOLUTE (Note 1) AXI U RATI GS PACKAGE/ORDER I FOR ATIO TOP VIEW 16 15 14 13 GND 1 IF + 2 IF – 3 GND 4 5 6 7 8 17 12 GND 11 RF + 10 RF – 9 GND Supply Voltage ....................................................... 5.5V Enable Voltage ............................. –0.3V to (VCC + 0.3V) LO Input Power (Differential) ............................ +10dBm LO+ to LO– Differential DC Voltage .......................... ±1V LO+ and LO– DC Common Mode Voltage ...... –1V to VCC IF Input Power (Differential) ............................. +10dBm IF+ and IF – DC Currents ........................................ 25mA RF+ to RF – Differential DC Voltage ...................... ±0.13V RF+ and RF – DC Common Mode Voltage ...... –1V to VCC Operating Temperature Range .................–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Junction Temperature (TJ).................................... 125°C ORDER PART NUMBER LT5519EUF GND GND LO– LO+ VCC1 VCC2 UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 17) IS GND MUST BE SOLDERED TO PCB VCC3 UF PART MARKING 5519 Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS PARAMETER IF Input Frequency Range LO Input Frequency Range RF Output Frequency Range CONDITIONS MIN TYP 1 to 400 300 to 1800 700 to 1400 MAX UNITS MHz MHz MHz 1GHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1GHz, unless otherwise noted. (Test circuit shown in Figure 2) (Notes 2, 3) PARAMETER IF Input Return Loss LO Input Return Loss RF Output Return Loss LO Input Power Conversion Gain Input 3rd Order Intercept Input 2nd Order Intercept LO to RF Leakage LO to IF Leakage Input 1dB Compression IF Common Mode Voltage Noise Figure Internally Biased Single-Side Band –10dBm/Tone, ∆f = 1MHz –10dBm, Single Tone CONDITIONS ZO = 50Ω, with External Matching Z O = 50 Ω Z O = 50 Ω MIN TYP 20 17 20 –10 to 0 –0.6 17.1 48 –44 –40 5.5 1.77 13.6 MAX UNITS dB dB dB dBm dB dBm dBm dBm dBm dBm VDC dB EN 2 U 5519f W U U WW W LT5519 DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted. (Note 3) PARAMETER Enable (EN) Low = OFF, High = ON Turn-On Time (Note 4) Turn-Off Time (Note 4) Input Current Enable = High (ON) Enable = Low (OFF) Power Supply Requirements (VCC) Supply Voltage Supply Current Shutdown Current VCC = 5VDC EN = Low 4.5 to 5.25 60 1 70 100 VDC mA µA VENABLE = 5VDC 3 0.5 2 6 1 10 µs µs µA VDC VDC CONDITIONS MIN TYP MAX UNITS Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: External components on the final test circuit are optimized for operation at fRF = 1GHz, fLO = 1.14GHz and fIF = 140MHz. Note 3: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Turn-On and Turn-Off times are based on the rise and fall times of the RF output envelope from –40dBm to full power with an IF input power of –10dBm. TYPICAL PERFOR A CE CHARACTERISTICS Supply Current vs Supply Voltage 66 64 TA = 85°C TA = 25°C SUPPLY CURRENT (mA) 62 60 58 56 54 52 50 4 4.25 SHUTDOWN CURRENT (µA) UW 4.5 (Test Circuit Shown in Figure 2) Shutdown Current vs Supply Voltage 1.2 1.0 0.8 TA = 85°C 0.6 0.4 0.2 0 5 5.25 4.75 SUPPLY VOLTAGE (V) 5.5 5519 G01 TA = – 40°C TA = – 40°C TA = 25°C 4 4.25 4.5 4.75 5 SUPPLY VOLTAGE (V) 5.25 5.5 5519 G02 5519f 3 LT5519 VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain and SSB Noise Figure vs RF Output Frequency 18 16 14 12 GAIN, NF (dB) 10 8 6 4 2 0 –2 –4 –6 500 GAIN LOW SIDE AND HIGH SIDE LO 700 1100 1300 900 RF OUTPUT FREQUENCY (MHz) 1500 5519 G03 TYPICAL PERFOR A CE CHARACTERISTICS IIP3 and IIP2 vs RF Output Frequency 25 HIGH SIDE LO LOW SIDE LO NF 23 HIGH SIDE LO 21 LOW SIDE LO 40 LO LEAKAGE (dBm) IIP3 (dBm) Conversion Gain and SSB Noise Figure vs LO Input Power 16 14 12 10 TA = 85°C TA = 25°C NF 20 18 16 14 19 IIP3 (dBm) NF (dB) 18 IIP3 17 TA = – 40°C 16 15 –16 TA = 85°C –12 –8 –4 0 LO INPUT POWER (dBm) 4 5519 G07 40 IIP2 (dBm) 30 TA = 25°C 20 10 0 LO LEAKAGE (dBm) GAIN (dB) 8 6 4 2 0 –2 –4 –16 GAIN TA = – 40°C TA = 25°C TA = – 40°C TA = 85°C –12 –6 –4 –8 LO INPUT POWER (dBm) –2 5519 G06 IIP3 and IIP2 vs LO Input Power 21 LOW SIDE LO 20 HIGH SIDE LO 19 40 IIP2 60 50 10 0 –10 POUT, IM3 (dBm/TONE) –20 –30 –40 –50 –60 –70 –80 IM3 POUT, IM2 (dBm/TONE) IIP3 (dBm) 18 IIP3 17 LOW SIDE LO 16 15 –16 HIGH SIDE LO –12 –8 –4 0 LO INPUT POWER (dBm) 4 UW 12 10 8 6 4 2 0 4 5519 G09 LO-RF Leakage vs RF Output Frequency 60 50 IIP2 –10 –20 IIP2 (dBm) –30 HIGH SIDE LO 19 17 15 13 500 IIP3 HIGH SIDE LO 30 20 LOW SIDE LO 10 0 1500 5519 G04 –40 LOW SIDE LO –50 700 900 1100 1300 RF OUTPUT FREQUENCY (MHz) –60 500 700 1100 1300 900 RF OUTPUT FREQUENCY (MHz) 1500 5519 G05 IIP3 and IIP2 vs LO Input Power 21 20 TA = 85°C TA = – 40°C TA = 25°C IIP2 –20 –30 60 50 0 –10 LO-RF Leakage vs LO Input Power TA = 85°C –40 –50 –60 –16 TA = 25°C TA = – 40°C –12 –8 –4 0 LO INPUT POWER (dBm) 4 5519 G08 RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 10 POUT TA = – 40°C TA = 85°C TA = 25°C TA = – 40°C TA = 85°C TA = 25°C 0 –10 –20 –30 –40 –50 –60 –70 –80 –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5519 G10 RF Output Power and Output IM2 vs IF Input Power (Two Input Tones) POUT TA = – 40°C TA = 85°C TA = 25°C IIP2 (dBm) 30 20 10 0 TA = – 40°C IM2 TA = 85°C TA = 25°C –90 –16 –90 –16 –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5519 G11 5519f LT5519 VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain vs IF Input Power (One Input Tone) 4 3 2 1 GAIN (dB) 0 –5 TYPICAL PERFOR A CE CHARACTERISTICS IF, LO and RF Port Return Loss vs Frequency TA = – 40°C RETURN LOSS (dB) TA = 25°C TA = 85°C GAIN (dB) 0 –1 –2 –3 –4 –5 –6 –16 –12 –4 0 –8 IF INPUT POWER (dBm) PI FU CTIO S GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These pins are used to improve isolation and are not intended as DC or RF grounds for the IC. Connect these pins to low impedance grounds on the PCB for best performance. IF+, IF – (Pins 2, 3): Differential IF Signal Inputs. A differential signal must be applied to these pins through DC blocking capacitors. The pins must be connected to ground with 100Ω resistors (the grounds must each be capable of sinking about 18mA). For best LO leakage performance, these pins should be DC isolated from each other. An impedance transformation is required to match the IF input to the desired source impedance (typically 50Ω or 75Ω). EN (Pin 5): Enable Pin. When the applied voltage is greater than 3V, the IC is enabled. When the applied voltage is less than 0.5V, the IC is disabled and the DC current drops to about 1µA. VCC1 (Pin 6): Power Supply Pin for the Bias Circuits. Typical current consumption is about 2mA. This pin should be externally connected to VCC and have appropriate RF bypass capacitors. VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is about 22mA. This pin should have appropriate RF bypass capacitors as shown in Figure 2. The 1000pF capacitor should be located as close to the pins as possible. VCC3 (Pin 8): Power Supply Pin for the Internal Mixer. Typical current consumption is about 36mA. This pin should be externally connected to VCC through an inductor. A 39nH inductor is shown in Figure 2, though the value is not critical. RF –, RF+ (Pins 10, 11): Differential RF Outputs. One pin may be DC connected to a low impedance ground to realize a 50Ω single-ended output. No external matching components are required. A DC voltage should not be applied across these pins, as they are internally connected through a transformer winding. LO+, LO – (Pins 14, 15): Differential Local Oscillator Inputs. The LT5519 works well with a single-ended source driving the LO+ pin and the LO– pin connected to a low impedance ground. No external 50Ω matching components are required. An internal resistor is connected across these pins; therefore, a DC voltage should not be applied across the inputs. Exposed Pad (Pin 17): DC and RF ground return for the entire IC. This must be soldered to the printed circuit board low impedance ground plane. 5519f UW 4 5519 G12 Conversion Gain, IIP3 and IIP2 vs Supply Voltage 10 8 HIGH SIDE LO IIP2 40 30 HIGH SIDE LO LOW SIDE LO GAIN LOW SIDE AND HIGH SIDE LO 4.5 4.75 5 SUPPLY VOLTAGE (V) 5.25 0 5.5 IIP3 20 10 IIP3, IIP2 (dBm) LOW SIDE LO 60 50 –10 –15 –20 –25 –30 0 500 1000 1500 FREQUENCY (MHz) 2000 5519 G13 6 4 2 RF PORT 0 –2 LO PORT IF PORT 4 4.25 5519 G14 U U U 5 LT5519 BLOCK DIAGRA W EXPOSED GND PAD 17 12 GND 13 5pF LO+ 14 85Ω LO – 15 5pF BIAS GND 16 7 VCC2 1 GND 2 IF + 3 IF – 4 GND 5 EN 5519 BD RF + 11 RF – 10 GND 9 HIGH SPEED LO BUFFER DOUBLEBALANCED MIXER 8 VCC3 10pF 6 VCC1 TEST CIRCUIT LOIN 1140MHz 16 GND GND 2 C2 4 R2 C3 3 4 IF – GND EN 5 0.018" 0.062" 0.018" DC GND ER = 4.4 RF GND EN VCC C5 C4 5519 F02 1 IFIN 140MHz 1 2 3 T1 5 C1 R1 15 LO – 14 13 LO+ GND GND RF + 12 11 RFOUT 1000MHz IF + LT5519 RF – GND VCC1 6 VCC2 7 VCC3 8 L1 10 9 17 REF DES C1, C2 C3 C4 C5 L1 R1, R2 T1 VALUE 220pF 33pF 1000pF 1µF 39nH 100Ω, 0.1% 4:1 SIZE 0402 0402 0402 0603 0402 0603 SM-22 PART NUMBER AVX 04023C221KAT2A AVX 04023A330KAT2A AVX 04023A102KAT2A Taiyo Yuden LMK107BJ105MA Toko LL1005-FH39NJ IRC PFC-W0603R-03-10R1-B M/A-COM ETC4-1-2 Figure 2. Test Schematic for the LT5519 5519f 6 LT5519 APPLICATIO S I FOR ATIO The LT5519 consists of a double-balanced mixer, a high performance LO buffer and bias/enable circuits. The RF and LO ports may be driven differentially; however, they are intended to be used in single-ended mode by connecting one input of each pair to ground. The IF input ports must be DC-isolated from the source and driven differentially. The IF input should be impedance-matched for the desired input frequency. The LO input has an internal broadband 50Ω match with return loss better than 10dB at frequencies up to 1800MHz. The RF output band ranges from 700MHz to 1400MHz, with an internal RF transformer providing a 50Ω impedance match across the band. Low side or high side LO injection can be used. IF Input Port The IF inputs are connected to the emitters of the doublebalanced mixer transistors, as shown in Figure 3. These pins are internally biased and an external resistor must be connected from each IF pin to ground to set the current through the mixer core. The circuit has been optimized to work with 100Ω resistors, which will result in approximately 18mA of DC current per side. For best LO leakage performance, the resistors should be well matched; thus resistors with 0.1% tolerance are recommended. If LO leakage is not a concern, then lesser tolerance resistors can be used. The symmetry of the layout is also important for achieving optimum LO isolation. The capacitors shown in Figure 3, C1 and C2, serve two purposes. They provide DC isolation between the IF+ and IF – ports, thus preventing DC interactions that could cause unpredictable variations in LO leakage. They also 100Ω 0.1% 2 C1 IFIN 50Ω T1 4:1 C3 C2 LT5519 18mA IF+ VCC IF – 18mA 5519 F03 3 100Ω 0.1% Figure 3. IF Input with External Matching U improve the impedance match by canceling excess inductance in the package and transformer. The input capacitor value required to realize an impedance match at desired frequency, f, can be estimated as follows: C1 = C2 = 1 (2πf)2 (LIN + LEXT ) where; f is in units of Hz, LIN and LEXT are in Henry, and C1, C2 are in Farad. LIN is the differential input inductance of the LT5519, and is approximately 1.67nH. LEXT represents the combined inductances of differential external components and transmission lines. For the evaluation board shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz, the above formula gives C1 = C2 = 220pF. Table 1 lists the differential IF input impedance and reflection coefficient for several frequencies. A 4:1 balun can be used to transform the impedance up to about 50Ω. Table 1. IF Input Differential Impedance FREQUENCY (MHz) 10 44 70 140 170 240 360 500 DIFFERENTIAL INPUT IMPEDANCE 10.1 + j0.117 10.1 + j0.476 10.1 + j0.751 10.2 + j1.47 10.2 + j1.78 10.2 + j2.53 10.2 + j3.81 10.2 + j5.31 DIFFERENTIAL S11 MAG ANGLE 0.663 0.663 0.663 0.663 0.663 0.663 0.663 0.663 180 179 178 177 176 174 171 167 W U U LO Input Port The simplified circuit for the LO buffer input is shown in Figure 4. The LO buffer amplifier consists of high speed limiting differential amplifiers, optimized to drive the mixer quad for high linearity. The LO + and LO – ports can be driven differentially; however, they are intended to be driven by a single-ended source. An internal resistor connected across the LO + and LO – inputs provides a broadband 50Ω impedance match. Because of the resistive match, a DC voltage at the LO input is not recommended. If the LO signal source output is not AC coupled, then a DC blocking capacitor should be used at the LO input. 5519f 7 LT5519 APPLICATIO S I FOR ATIO LOIN 50Ω LT5519 LO+ 14 5pF 220Ω VCC 85Ω 220Ω 15 LO – 5pF 5519 F04 Figure 4. LO Input Circuit Though the LO input is internally matched to 50Ω, there may be some cases, particularly at higher frequencies or with different source impedances, where a further optimized match is desired. Table 2 includes the single-ended input impedance and reflection coefficient vs frequency for the LO input for use in such cases. Table 2. Single-Ended LO Input Impedance FREQUENCY (MHz) 200 400 600 800 1000 1200 1400 1600 1800 INPUT IMPEDANCE 72.3 – j16.1 63.3 – j11.3 61.6 – j7.5 61.9 – j6.0 62.7 – j6.1 63.2 – j7.4 63.3 – j9.5 62.8 – j12.0 61.6 – j14.2 S11 MAG 0.223 0.153 0.124 0.119 0.125 0.134 0.144 0.155 0.163 ANGLE –28.4 –34.7 – 29.2 – 23.6 –22.7 –25.5 –30.8 –37.1 –43.4 RF Output Port An internal RF transformer, shown in Figure 5, reduces the mixer-core impedance to provide an impedance of 50Ω across the RF + and RF – pins. The LT5519 is designed and tested with the outputs configured for single-ended operation, as shown in the Figure 5; however, the outputs can be used differentially as well. A center tap in the transformer provides the DC connection to the mixer core and the transformer provides DC isolation at the RF output. The 8 U LT5519 RF+ 11 VCC RF– 10pF 8 VCC3 10 RFOUT 50Ω 5519 F05 W U U Figure 5. RF Output Circuit RF + and RF – pins are connected together through the secondary windings of the transformer; thus a DC voltage should not be applied across these pins. The impedance data for the RF output, listed in Table 3, can be used to develop matching networks for different load impedances. Table 3. Single-Ended RF Output Impedance FREQUENCY (MHz) 700 800 900 1000 1100 1200 1300 1400 OUTPUT IMPEDANCE 27.6 + j32.0 39.7 + j32.1 50.9 + j23.5 53.5 + j10.3 48.3 + j1.3 42.0 – j3.1 36.6 – j3.4 33.0 – j2.0 S11 MAG 0.465 0.354 0.227 0.105 0.022 0.093 0.159 0.207 ANGLE 103 88.1 74.7 65.5 143 –157 –164 –172 Operation at Different Input Frequencies On the evaluation board shown in Figure 10, the input of the LT5519 can be easily matched for different frequencies by changing the capacitors, C1, C2 and C3. Capacitors C1 and C2 set the input matching frequency while C3 improves the LO to RF leakage performance. Decreasing the value of C3 at higher input frequencies reduces its impact on conversion gain. Table 4 lists some actual values used at selected frequencies. 5519f LT5519 APPLICATIO S I FOR ATIO Table 4. Input Capacitor Values vs Frequency FREQUENCY (MHz) 44 70 140 240 300 350 440 CAPACITANCE (C1, C2) (pF) 2200 820 220 68 39 27 18 CAPACITANCE (C3) (pF) 33 33 33 15 6.8 6.8 6.8 The performance was evaluated with the input tuned for each of these frequencies and the results are summarized in Figures 6-8. The same IF input balun transformer was used for all measurements. In each case, the LO input 6 5 4 3 SSB NF HIGH SIDE LO INPUT TUNED FOR EACH TEST FREQUENCY 20 18 16 GAIN (dB) 2 1 0 –1 –2 –3 –4 0 GAIN LOW SIDE 12 10 8 LOW SIDE 6 4 2 0 500 5519 F06 LEAKAGE (dBm) 14 VCC = 5V PLO = – 5dBm TA = 25°C HIGH SIDE LO 100 300 400 200 INPUT FREQUENCY (MHz) Figure 6. Conversion Gain and Single Sideband Noise Figure vs Tuned IF Input Frequency 27 25 23 HIGH SIDE INPUT TUNED FOR EACH TEST FREQUENCY LOW SIDE IIP2 50 70 60 IIP3 (dBm) GAIN (dB) 21 19 17 15 13 0 IIP3 HIGH SIDE LO 40 30 20 LOW SIDE VCC = 5V, TA = 25°C PLO = – 5dBm 100 400 INPUT FREQUENCY (MHz) 200 300 10 0 500 5519 F07 Figure 7. IIP3 and IIP2 vs Tuned IF Input Frequency U frequency was adjusted to maintain an RF output frequency of 1000MHz. Low Frequency Matching of the RF Output Port Without any external components on the RF output, the internal transformer of the LT5519 provides a good 50Ω impedance match for RF frequencies above approximately 850MHz. Below this frequency, the return loss drops below 10dB and degrades the conversion gain. The addition of a single 10pF capacitor in series with the RF output improves the match at lower RF frequencies, shifting the 10dB return loss point to about 700MHz, as demonstrated in Figure 9. This change also results in an improvement of the conversion gain. 0 INPUT TUNED FOR EACH TEST FREQUENCY VCC = 5V –10 PLO = – 5dBm TA = 25°C –20 –30 –40 –50 –60 1 100 200 300 400 INPUT FREQUENCY (MHz) 500 5519 F08 W U U NF (dB) HIGH SIDE LO LOW SIDE LO Figure 8. LO to RF Leakage vs Tuned IF Input Frequency 0 –1 –2 NO COUT COUT = 10pF 0 –5 GAIN –10 –15 –20 –25 COUT = 10pF –6 NO COUT –35 –7 700 800 900 1000 1100 1200 1300 1400 RF OUTPUT FREQUENCY (MHz) 5519 F09 RETURN LOSS (dB) IIP2 (dBm) –3 –4 –5 RETURN LOSS –30 Figure 9. Conversion Gain and Return Loss vs Output Frequency 5519f 9 LT5519 TYPICAL APPLICATIO S U (10a) Top Layer Silkscreen (10b) Top Layer Metal Figure 10. Evaluation Board Layout 5519f 10 LT5519 PACKAGE DESCRIPTIO U UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ± 0.05 PACKAGE OUTLINE 0.30 ± 0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 (UF) QFN 0503 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) 0.200 REF 0.00 – 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 0.30 ± 0.05 0.65 BSC 5519f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5519 RELATED PARTS PART NUMBER Infrastructure LT5511 LT5512 LT5515 LT5516 LT5517 LT5520 LT5522 High Signal Level Upconverting Mixer DC-3GHz High Signal Level Downconverting Mixer 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 40MHz to 900MHz Direct Conversion Quadrature Demodulator 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 600MHz to 2.7GHz High Signal Level Downconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer RF Input to 3GHz, 21dBm IIP3, Integrated LO Buffer 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator 15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC5505-1: –28dBm to +18dBm Range, LTC5505-2: –32dBm to +12dBm Range,Temperature Compensated, 2.7V to 6V Supply –34dBm to +14dBm Range, Temperature Compensated, 2.7V to 6V Supply –32dBm to +12dBm Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Temperature Compensated, SC70 Package Precision VOUT Offset Control, Adjustable Gain and Offset 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –7dB to 56dB Linear Power Gain DESCRIPTION COMMENTS RF Power Detectors LT5504 LTC5505 LTC5507 LTC5508 LTC5509 LTC5532 LT5500 LT5502 LT5503 LT5506 LT5546 800MHz to 2.7GHz RF Measuring Receiver 300MHz to 3GHz RF Power Detectors 100kHz to 1000MHz RF Power Detector 300MHz to 7GHz RF Power Detector 300MHz to 3GHz RF Power Detector 300MHz to 7GHz Precision RF Power Detector 1.8GHz to 2.7GHz Receiver Front End 400MHz Quadrature IF Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 500MHz Quadrature IF Demodulator with VGA 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth RF Building Blocks 5519f 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 q FAX: (408) 434-0507 q LT/TP 0104 1K • PRINTED IN USA www.linear.com © LINEAR TECHNOLOGY CORPORATION 2004