H11D1S-TA

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Current transfer ratio ( CTR : MIN. 20% at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type * Wide lead spacing package : H11D1M : 1-channel type * Surface mounting package : H11D1S : 1-channel type * Tape and reel packaging : H11D1S-TA1 * UL approved ( No. E113898 ) * VDE approved ( No. 094722 ) Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 1 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS H11D1 : H11D1M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS H11D1S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS H11D1S-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 4 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current IF 60 mA Reverse Voltage VR 6 V Power Dissipation P 100 mW Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 7 V Collector - Base Voltage VCBO 300 V Emitter - Collector Voltage VECO 7 V Collector Current IC 100 mA Collector Power Dissipation PC 150 mW Ptot 250 mW Viso 5,000 Vrms Operating Temperature Topr -55 ~ +100 °C Storage Temperature Tstg -55 ~ +150 °C Tsol 260 °C INPUT OUTPUT Total Power Dissipation *1 Isolation Voltage *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 5 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER INPUT OUTPUT *1 CTR = CONDITIONS Forward Voltage VF — 1.2 1.5 V IF = 10mA Reverse Current IR — 0.01 10 µA VR = 6V Terminal Capacitance Ct — 30 250 pF V=0, f = 1KHz Collector Dark Current ICER — — 100 nA VCE=200V RBE=1MΩ Collector-Emitter Breakdown Voltage BVCER 300 — — V IC=0.1mA, IF=0 RBE=1MΩ Emitter-Collector Breakdown Voltage BVECO 7 — — V IE=10µA IF=0 IC 2 — — mA *1 Current Transfer Ratio CTR 20 — — % Collector-Emitter Saturation Voltage VCE(sat) — 0.25 0.4 V IF=10mA,IC=0.5mA RBE=1MΩ Isolation Resistance Riso 5x1010 — — Ω DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 0.6 — pF V=0, f=1MHz Turn - on Time t on — 5 — µs Turn - off Time t off — 5 — µs Collector Current TRANSFER CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT IF=10mA,VCE=10V RBE=1MΩ VCC=10V, IC=2mA RL=100Ω IC × 100% IF Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 6 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) Forward current I F (mA) 100 80 60 40 20 0 -55 -25 0 25 50 75 100 125 200 150 100 50 0 -55 -25 o 7mA 3 2 100 C o o 80 C 40 C o 20 C o 60 C 10 1 1 0 4 2 8 10 12 14 16 18 20 6 0.5 0.7 0.9 1.1 Fig.6 Collector Current vs. Collector-emitter Voltage Fig.5 Output Current vs. Forward Current Curve 10.00 1.3 1.5 1.7 1.9 Forward voltage (V) Forward current I F (mA) 30 I F= 10mA VCE= 10V RBE= 1M Collector current Ic (mA) Ice(on)-Normalized output current 100 125 o 0 1.00 0.10 PC (MAX.) 25 25mA 20mA I F= 30mA 20 15mA 10mA 15 10 5mA 5 0 0.01 1 2 5 10 20 50 Forward current I F (mA) Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 75 100 Forward current (mA) Collector-emitter saturation voltage V (sat) (V) 4 50 Fig.4 Forward Current vs. Forward Voltage Ic= 0.5mA 1mA 3mA 5mA 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter saturation Voltage vs. Forward current 6 0 o Ambient temperature Ta ( C) 100 0 2 4 6 8 10 Collector-emitter voltage VCE(V) Page : 7 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 0.12 I F= 10mA VCE= 10V 1.0 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 1.2 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.8 0.6 0.4 0.2 I F= 20mA I C= 1mA 0.10 0.08 0.06 0.04 0.02 0 0.00 20 40 60 80 100 40 20 O 100 Fig.10 Response Time vs. Load Resistance 100 VCE= 200V Response time ( s) Collector dark current ICEO (nA) 80 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 1000 60 O Ambient temperature Ta ( C) 100 10 VCE= 2V I C= 2mA 10 tf tr td 1 20 40 60 80 1 0.1 100 O Fig.11 Frequency Response Test Circuit for Response Time Vcc 0 VCE= 5V I C= 2mA -1 10 1 Load resistance RL (k ) Ambient temperature Ta ( C) Input -2 Voltage gain Av (dB) ts RD RL Input Output Output 10% 90% -3 RL= 10k -4 1k 100 ts td tr -5 tf -6 Test Circuit for Frequency Response -7 Vcc -8 -9 RD -10 1 10 100 RL Output 500 Frequency f (kHz) Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 8 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm Part No. : H11D1 ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 9 of 9