LN8340DT1AG

LN8340DT1AG N-Channel 30-V (D-S) MOSFET 1. FEATURES ● Low RDS(on) trench technology. ● Low thermal impedance. Fast switching speed. ● We declare that the material of product are Halogen Free and compliance with RoHS requirements. ● 2. APPLICATION ● Power Routing ● DC/DC Conversion ● Motor Drives 3. ORDERING INFORMATION Device LN8340DT1AG Marking N40 Shipping 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Parameter Drain−to−Source Voltage Symbol VDSS Limits 30 Unit V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current(Note 1) TA =25°C TA =70°C Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction)(Note 1) TA =25°C Power Dissipation(Note 1) TA =70°C Operating Junction Temperature Storage Temperature Range ID 17 12.2 IDM 60 IS 4.6 PD 3.5 2 TJ −55 ~+150 Tstg −55 ~+150 A A W ℃ 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS Parameter Maximum Junction-to-Ambient(Note 1) Leshan Radio Company, LTD. Symbol t≤10s Steady State Rev.O Jun. 2017 RθJA Limits 35 81 Unit ℃/W 1/5 LN8340DT1AG N-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min. Typ. Max. 1 - - - - ±100 - - 1 25 25 - - - 7.5 11.5 9 15 - 11 - - 0.78 - - 10 5.2 3.7 1407 160 118 6 6 28 8 - Unit Static Gate-Source Threshold Voltage (VDS = VGS , ID = 250 uA) Gate-Body Leakage (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = 24 V, VGS = 0 V) (VDS = 24 V, VGS = 0 V, TJ = 55°C) On-State Drain Current(Note 3) (VDS = 5 V, VGS = 10 V) Drain-Source On-Resistance(Note 3) (VGS = 10 V, ID = 12.8 A) (VGS = 4.5 V, ID = 10.3 A) Forward Transconductance(Note 3) (VDS = 15 V, ID =12.8 A) Diode Forward Voltage(Note 3) (IS = 2.3 A, VGS = 0 V) Dynamic(Note 4) VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Total Gate Charge (VDS = 15 V, VGS = 4.5 V,ID = Qgs Gate-Source Charge 12.8 A) Qgd Gate-Drain Charge Ciss Input Capacitance (VDS = 15 V, VGS = 0 V, f = 1 Coss Output Capacitance Mhz) Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time (VDS = 15 V, RL tr = 1.2 Ω,ID = 12.8 Rise Time A,VGEN = 10 V, td(off) Turn-Off Delay Time RGEN = 6 Ω) tf Fall Time 3.Pulse test: PW≤ 300µs duty cycle ≤ 2%. 4.Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.O Jun. 2017 V nA µA A mΩ S V nC pF ns 2/5 LN8340DT1AG N-Channel 30-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 0.05 10 8 0.04 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3.5V 0.03 4V 0.02 6 4 2 0.01 4.5V,6V,8V,10V 0 0 0 5 10 ID-Drain Current (A) 0 15 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Transfer Characteristics 0.05 TJ = 25°C 0.04 IS - Source Current (A) RDS(on) - On On-Resistance(Ω) TJ = 25°C ID = 12.8A 0.03 0.02 0.01 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Drain -to-Source Forward Voltage 2000 15 F = 1MHz 10V,8V,6V,4.5V Capacitance (pf) ID - Drain Current (A) Ciss 1500 10 4V 3.5V 5 1000 500 Coss Crss 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 Output Characteristics Leshan Radio Company, LTD. 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Capacitance Rev.O Jun. 2017 3/5 LN8340DT1AG N-Channel 30-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 10 2 ID = 12.8A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = 15V 6 4 2 0 1.5 1 0.5 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ -JunctionTemperature(°C) Gate Charge Normalized On-Resistance Vs Junction Temperature 150 PEAK TRANSIENT POWER (W) 60 ID Current (A) 100 10uS 10 100uS 1000uS 1 0.1 50 40 30 20 10 0.01 0 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 t1 TIME (SEC) VDS Drain to Source Voltage (V) Safe Operating Area Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 81 °C /W 0.05 0.02 P(pk) t1 Single Pulse t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1 TIME (sec) Normalized Thermal Transient Junction to Ambient Leshan Radio Company, LTD. Rev.O Jun. 2017 4/5 LN8340DT1AG N-Channel 30-V (D-S) MOSFET 8.OUTLINE AND DIMENSIONS DFN3030-8B Min Nor Dim Max A 0.60 0.65 0.70 A1 0.00 0.03 0.05 b 0.30 0.35 0.40 b1 0.40 0.45 0.50 b2 0.50 0.55 0.60 D 2.95 3.00 3.05 3.00 3.05 E 2.95 2.50 2.55 D1 2.45 1.50 1.55 E1 1.45 0.65BSC e L 0.45 0.55 0.50 L1 0.44 0.49 0.54 0.62 L2 0.57 0.67 0.152REF. A3 All Dimensions in mm 9.SOLDERING FOOTPRINT DFN3030-8B Dim C C1 X X1 X2 X3 Y1 Y2 Leshan Radio Company, LTD. Rev.O Jun. 2017 (mm) 0.65 0.70 0.60 0.40 0.50 2.80 2.20 3.20 5/5