S-LN2604DT2AG

S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 1. FEATURES ● VDS = 60 V RDS(ON)≤35mΩ ,VGS@10V,IDS@5A RDS(ON)≤40mΩ,VGS@4.5V,IDS@4A ● Low RDS(ON) trench technology Low thermal impedance ● Fast switching speed ● We declare that the material of product are Halogen Free and ● compliance with RoHS requirements. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 D D D D G S qualified and PPAP capable. 2.APPLICATIONS ● DC/DC Conversion ● Power Routing ● Motor Drives 3. ORDERING INFORMATION Device Marking S-LN2604DT2AG 04D Shipping 4000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Drain−to−Source Voltage Symbol VDSS Limits 60 Unit V Gate−to−Source Voltage VGS ±20 V Avalanche Current IAS 10 A Avalanche energy L=0.1mH EAS 5 mJ Parameter Continuous Drain Current(Note 1) TA =25°C ID TA =70°C IDM Pulsed Drain Current (Note 2) TA =25°C Power Dissipation(Note 1) PD TA =70°C Operating Junction and Storage Temperature Range TJ , TSTG 7 4 28 2 1.5 −55 ~+150 A A W ºC 5. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Junction−to−Ambient(Note 3) R qJA 60 °C/W Junction−to−Case R qJC 20 °C/W 1.Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 2.Pulse width limited by maximum junction temperature. Leshan Radio Company, LTD. Rev.A Oct. 2020 1/6 S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 6. ELECTRICAL CHARACTERISTICS Characteristic Static Drain–Source Breakdown Voltage (VGS = 0, ID = 250μA) Gate-Source Threshold Voltage (VDS = VGS , ID = 250 μA) Gate-Body Leakage Symbol Min. Typ. Max. Unit V(BR)DSS 60 - - V VGS(th) 1 1.9 3 V IGSS - - ±10 uA IDSS - - 1 µA RDS(on) - 35 mΩ - 23 32 VSD - 0.78 1.5 V Qg Qgs Qgd td(on) - 9 3.2 3 6 - nC tr - 6 - td(off) - 33 - 11 1280 - (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = 48 V, VGS = 0 V) Drain-Source On-Resistance(Note 3) (VGS = 10 V, ID = 7 A) (VGS = 4.5 V, ID = 5 A) Diode Forward Voltage(Note 3) (IS = 1.9 A, VGS = 0 V) Dynamic(Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 15 V, VGS = 4.5 V, ID = 6 A) Turn-On Delay Time (VDS = 15 V, RL=1.4 Ω,ID =6 A,VGEN = 10 V, RGEN = 6 Ω) Rise Time Turn-Off Delay Time Fall Time Input Capacitance (VDS = 15 V, VGS = 0 V, f = 1 Mhz) Reverse Transfer Capacitance Gate Resistance Output Capacitance (VDS=0V ,VGS=0V, f=1.0MHz) tf Ciss Coss - Crss Rg 40 - 65 - - 53 - - 0.74 - ns pF Ω 3.Pulse test: PW ≤ 300us duty cycle ≤ 2%. 4.Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.A Oct. 2020 2/6 S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES VGS=4V,6V,8V,10V 28 28 VGS=3.8V 24 24 VGS=3.6V 16 20 VGS=3.4V ID(A) ID(A) 20 VDS=10V 12 25℃ 16 12 VGS=3.2V 8 150℃ 8 VGS=3.0V 4 VGS=2.6V 0 0 1 2 3 4 -55℃ 4 VGS=2.8V 0 5 0.0 0.5 VDS(V) ID vs. VDS 1.0 1.5 2.0 2.5 VGS(V) 3.0 3.5 4.0 ID vs. VGS 0.050 50 0.045 0.040 150℃ 0.5 25℃ -55℃ RDS(on) (Ω) IS(A) 5 0.035 VGS=4.5V 0.030 0.025 VGS=10V 0.020 0.05 0.015 0.010 0.005 0.0 0.2 0.4 0.6 0.8 VSD(V) 1.0 1.2 2 IS vs. VSD Leshan Radio Company, LTD. 4 6 8 10 12 14 16 18 20 22 24 26 28 ID(A) RDS(on) vs. ID Rev.A Oct. 2020 3/6 S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.10 0.06 ID=7.0A 0.05 0.04 150℃ RDS(on) (Ω) RDS(on) (Ω) 0.08 0.06 25℃ 0.04 VGS=4.5V,ID=5.0A 0.03 VGS=10V,ID=7.0A 0.02 -55℃ 0.02 0.01 0.00 0 0 2 4 6 8 10 -50 -25 0 25 VGS(V) 2.0 1800 1.9 1600 ID=250uA Capacitance(pF) VGSth(V) 1.7 1.6 1.5 1.4 1.3 1200 1000 800 600 1.2 400 1.1 200 1.0 0 -25 0 25 50 75 Tj(℃) 100 125 150 VGSth vs. Tj Leshan Radio Company, LTD. f=1.0MHz, Ta=25℃ Ciss 1400 -50 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 1.8 50 75 Tj (℃) Coss Crss 0 10 20 30 VDS(V) 40 50 60 Capacitance Rev.A Oct. 2020 4/6 S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us 10 ID(A) 100us 1 100ms 1ms 10ms DC result 0.1 0.01 0.1 1 10 100 VDS(V) Safe Operating Area Leshan Radio Company, LTD. Rev.A Oct. 2020 5/6 S-LN2604DT2AG 60V N-Channel Enhancement MOSFET 8.OUTLINE AND DIMENSIONS DIM A A1 b D E e L L1 D1 E1 A3 DFN2020-6S MIN NOR 0.60 0.65 0.01 0.03 0.25 0.30 1.95 2.00 1.95 2.00 0.65TYP. 0.23 0.28 0.60 0.65 0.90 0.95 1.10 1.15 0.152REF All Dimensions in mm MAX 0.70 0.05 0.35 2.05 2.05 0.33 0.65 1.00 1.20 9.SOLDERING FOOTPRINT Dim X X1 X2 e Y Y1 Y2 Y3 Y4 Leshan Radio Company, LTD. Rev.A Oct. 2020 DFN2020-6S (mm) 0.40 0.95 1.70 0.65 0.43 0.75 1.15 1.54 2.39 6/6 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. 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