MMBD330T1

LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • Available in 8 mm Tape and Reel MMBD110T1 MMBD330T1 MMBD770T1 3 1 2 CASE 419–02, STYLE 2 DEVICE MARKING MMBD110T1 = 4M MAXIMUM RATINGS Rating Reverse Voltage SOT–323 /SC – 70 MMBD330T1 = 4T MMBD770T1 = 5H Symbol VR Value 7.0 30 70 120 –55 to +125 –55 to +150 °C Typ 10 — — 0.88 0.9 0.5 20 13 9.0 6.0 0.5 0.38 0.52 0.42 0.7 Unit Vdc MMBD110T1 MMBD330T1 MMBD770T1 Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage V(BR)R (IR = 10 µA) MMBD110T1 7.0 MMBD330T1 MMBD770T1 Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) (VR = 15 Volts, f = 1.0 MHZ) (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF= 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) CT MMBD110T1 MMBD330T1 MMBD770T1 IR MMBD110T1 MMBD330T1 MMBD770T1 NF MMBD110T1 VF MMBD110T1 MMBD330T1 MMBD770T1 — — — — — — — — — — — — 30 70 Max — — — Unit Volts pF 1.0 1.5 1.0 nAdc 250 200 200 dB — Vdc 0.6 0.45 0.6 0.5 1.0 MMBD110. 330. 770T1–1/4 LESHAN RADIO COMPANY, LTD. MMBD110T1 MMBD330T1 MMBD770T1 TYPICAL CHARACTERISTICS MMBD110T1 1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100 IF, FORWARD CURRENT (mA) 10 TA = 85°C TA = – 40°C 1.0 TA = 25°C MMBD110T1 0.02 MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.1 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0.7 0.8 Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) C, CAPACITANCE (pF) 0.9 9 8 7 6 5 4 3 MMBD110T1 2 4.0 1 0.1 0.2 0.8 0.7 MMBD110T1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 0.6 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS Note 1 — CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5 Figure 5. Noise Figure Test Circui MMBD110. 330. 770T1–2/4 LESHAN RADIO COMPANY, LTD. MMBD110T1 MMBD330T1 MMBD770T1 TYPICAL CHARACTERISTICS MMBD330T1 2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) MMBD330T1 MMBD330T1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Total Capacitance Figure 7. Minority Carrier Lifetime 10 MMBD330T1 1.0 TA = 100°C TA = 75°C 0.1 TA = 25°C 100 MMBD330T1 IF, FORWARD CURRENT (mA) TA = – 40°C 10 TA = 85°C IR, REVERSE LEAKAGE (m A) 1.0 TA = 25°C 0.01 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 8. Reverse Leakage Figure 9. Forward Voltage MMBD110. 330. 770T1–3/4 LESHAN RADIO COMPANY, LTD. MMBD110T1 MMBD330T1 MMBD770T1 TYPICAL CHARACTERISTICS MMBD770T1 2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MMBD770T1 MMBD770T1 400 KRAKAUER METHOD 300 1.2 t , MINORITY CARRIER LIFETIME (ps) 50 0.8 200 0.4 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 10. Total Capacitance Figure 11. Minority Carrier Lifetime 10 MMBD770T1 1.0 TA = 100°C TA = 75°C 0.1 100 MMBD770T1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 10 TA = 85°C TA = – 40°C 1.0 TA = 25°C 0.01 TA = 25°C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 12. Reverse Leakage Figure 13. Forward Voltage MMBD110. 330. 770T1–4/4