MMBD330T1G

MMBD330T1G, MMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT- 323/SC- 70 package which is designed for low- power surface mount applications. Features 1 http://onsemi.com 3      Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available in 8 mm Tape and Reel These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAMS 3 1 XX M G G 1 MAXIMUM RATINGS Rating Reverse Voltage MMBD330T1 MMBD770T1 Symbol VR IF IFSM PF TJ Tstg Value 30 70 200 1.0 120 - 55 to +125 - 55 to +150 Unit Vdc mA A mW C C 2 SC- 70/SOT- 323 CASE 419 Forward Continuous Current (DC) Nonrepetitive Peak Forward Current (Note 1) Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range XX = Specific Device Code 4T = MMBD330T1 5H = MMBD770T1 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon the manufacturing location. ORDERING INFORMATION Device MMBD330T1G MMBD770T1G Package SC-70 (Pb-Free) SC-70 (Pb-Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 60 Hz Halfsine. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 5 1 Publication Order Number: MMBD330T1/D MMBD330T1G, MMBD770T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 15 Volts, f = 1.0 MHZ) (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMBD330T1 MMBD770T1 MMBD330T1 MMBD770T1 MMBD330T1 MMBD770T1 MMBD330T1 MMBD770T1 Symbol V(BR)R Min 30 70 Typ 0.9 0.5 13 9.0 0.38 0.52 0.42 0.70 Max 1.5 1.0 200 200 0.45 0.60 0.50 1.0 Unit Volts CT pF IR nAdc VF Vdc TYPICAL CHARACTERISTICS MMBD330T1 2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 f = 1.0 MHz τ , MINORITY CARRIER LIFETIME (ps) MMBD330T1 500 MMBD330T1 400 KRAKAUER METHOD 300 200 100 0 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 MMBD330T1 IR, REVERSE LEAKAGE (m A) 1.0 TA = 100C TA = 75C 100 IF, FORWARD CURRENT (mA) MMBD330T1 TA = - 40C 10 TA = 85C 0.1 0.01 TA = 25C 1.0 TA = 25C 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 3. Reverse Leakage Figure 4. Forward Voltage http://onsemi.com 2 MMBD330T1G, MMBD770T1G TYPICAL CHARACTERISTICS MMBD770T1 2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 f = 1.0 MHz τ , MINORITY CARRIER LIFETIME (ps) MMBD770T1 500 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100 Figure 5. Total Capacitance Figure 6. Minority Carrier Lifetime 10 MMBD770T1 IR, REVERSE LEAKAGE (m A) 1.0 TA = 100C TA = 75C 100 IF, FORWARD CURRENT (mA) MMBD770T1 10 TA = 85C TA = - 40C 0.1 1.0 TA = 25C 0.01 TA = 25C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 7. Reverse Leakage Figure 8. Forward Voltage http://onsemi.com 3 MMBD330T1G, MMBD770T1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419--04 ISSUE N D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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