MMVL105GT1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL105GT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio • Device Marking: M4E 30 VOLT VOLTAGEVARIABLE CAPACITANCE DIODES 1 2 ORDERING INFORMATION Device MMVL105GT1 Package SOD–323 S hipping 3000 / Tape & Reel PLASTIC, CASE 477 SOD– 323 1 CATHODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C RθJA TJ, Tstg *FR–4 Minimum Pad Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) Ct VR = 25 Vdc, f = 1.0 MHz pF Device Type MMVL105T1 Min 1.5 Max 2.8 Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0 CR, C3/C25 f = 1.0 MHz Max 6.5 IR — 50 nAdc Themal Resistance Junction toAmbient Junction and Storage Temperature 1.57 635 150 mW/°C °C/W °C Value 30 200 Max 200 Unit Vdc mAdc Unit mW 2 ANODE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol V(BR)R Min 30 Max — Unit Vdc MMVL105GT1–1/2 LESHAN RADIO COMPANY, LTD. MMVL105GT1 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25°C 1000 VR = 3 Vdc TA = 25°C 100 10 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance MMVL105GT1–2/2