MMVL105GT1

MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc mAdc http://onsemi.com 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS 2 Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C Max Unit 1 PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad MARKING DIAGRAM 4E M G G 4E = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL105GT1 MMVL105GT1G Package Shipping † SOD−323 3000 / Tape & Reel SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 2 Publication Order Number: MMVL105GT1/D MMVL105GT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Min MMVL105GT1 1.5 Max 2.8 Symbol V(BR)R IR Min 30 − Typ − − Max − 50 Unit Vdc nAdc Device Type Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0 CR C3/C25 f = 1.0 MHz Max 6.5 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C 100 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance http://onsemi.com 2 MMVL105GT1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 A3 A L NOTE 5 MIN 0.031 0.000 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 3 MMVL105GT1/D