MRF1000MB

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1000MB 0.7 W, 960–1215 MHz CLASS A/AB MICROWAVE POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.5 200 7.0 40 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C CASE 332A–03, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.5 — — — — — — — — — — 0.5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10 — 100 — 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. Replaces MRF1000MA/D 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 2.0 5.0 pF FUNCTIONAL TESTS Common–Emitter Power Gain — Class A (VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW) Common–Emitter Power Gain — Class AB (VCE = 18 Vdc, ICQ = 10 mAdc, f = 1090 MHz, Pout = 0.7 W) Load Mismatch — Class A (VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW, VSWR = 10:1 All Phase Angles) GPE GPE ψ No Degradation in Power Output 10 — 12 10.7 — — dB dB C1, C2, C3, C7, C8, C10 — 220 pF ATC 100 mil C4, C9 — 4.7 µF 50 V Tantalum C5, C6 — 0.8–8.0 pF Johanson #7290 Z1–Z10 — Distributed Microstrip Elements Z1–Z10 — See Figure 8 Board Material — 0.031″ Thick Teflon–Fiberglass Board Material — εr = 2.56 C2 BASE BIAS INPUT B C7 C8 C9 C COLLECTOR BIAS INPUT C3 C4 Z6 Z7 Z2 Z3 Z5 Z9 RF OUTPUT RF INPUT C1 Z1 Z4 C5 DUT Z8 C6 Z10 C10 Class AB Bias Control Circuit 18 V Output ICQ 10 mA Nominal 10 µF 50 V 0.1 µF 50 V 0.1 µF 50 V +18 V INPUT R2 11 k 1/2 W Class A Constant Current Bias Control Circuit IC = 100 mA, VCE = 18 V 100 2W 2N3906 R3 R5 18 k 1/2 W C4 0.1 µF 50 V R4 C1 C2 1k 1/2 W 2.2 k C3 1/2 W 0.1 µF 50 V 10 µF 50 V 0.1 µF 50 V +28 V INPUT +18 V COLLECTOR BIAS OUTPUT TO POINT C R1 Q1 330 1/2 W 10 1/2 W +18 V COLLECTOR BIAS OUTPUT TO POINT C BASE BIAS OUTPUT TO POINT B BASE BIAS OUTPUT TO POINT B Figure 1. 1090 MHz Test Circuit Replaces MRF1000MA/D 2 1 Pout , OUTPUT POWER (WATTS) 0.8 0.6 0.4 0.2 0 CLASS A IC = 100 mA VCE = 18 V f = 1090 MHz 0 20 40 60 Pin, INPUT POWER (mW) 80 100 CLASS AB ICQ = 10 mA VCE = 18 V Pout , OUTPUT POWER (WATTS) 1 0.8 0.6 0.4 0.2 0 CLASS A Pin = 20 mW IC = 100 mA VCE = 18 V 960 1090 f, FREQUENCY (MHz) 1215 CLASS A Pin = 60 mW ICQ = 10 mA VCE = 18 V Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 1 IC, COLLECTOR CURRENT (AMP) 0.5 0.2 0.1 CLASS A BIAS POINT G PE , POWER GAIN (dB) 14 13 12 CLASS A Pout = 200 mW IC = 100 mA VCE = 18 V 0.05 0.02 0.01 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 11 CLASS AB Pout = 500 mW ICQ = 10 mA VCE = 18 V 960 1090 f, FREQUENCY (MHz) 1215 10 Figure 4. DC Safe Operating Area Figure 5. Power Gain versus Frequency +j50 +j25 Zin 1215 1090 960 1250 S11 1100 950 10 +j100 +j150 +j250 +j500 25 50 100 150 250 500 SERIES EQUIVALENT IMPEDANCES Pout = 0.5 W, VCE = 18 Vdc, ICQ = 10 mAdc, Class AB f MHz 960 1090 1215 Zin Ohms 3.0 + j9.0 3.2 + j10 2.8 + j12 ZOL* Ohms 16 – j40 8.5 – j31 7.0 – j26 +j10 0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage, and frequency. -j500 -j10 1215 -j25 ZOL* 1090 S22 950 1100 1250 960 -j50 COORDINATES IN OHMS -j250 -j150 -j100 S–PARAMETERS — VCE = 18 Vdc, IC = 100 mAdc, Class A f (MHz) 950 1000 1050 1100 1150 1200 1250 S11 |S11| 0.77 0.78 0.77 0.77 0.78 0.78 0.78 ∠φ 166 165 163 162 161 159 158 S21 |S21| 2.42 2.36 2.31 2.31 2.20 2.20 2.12 ∠φ 40 38 33 28 23 19 12 S12 |S12| 0.016 0.016 0.016 0.016 0.015 0.016 0.016 ∠φ 42 48 46 46 46 47 42 S22 |S22| 0.48 0.50 0.51 0.54 0.57 0.59 0.61 ∠φ –87 –90 –94 –97 –100 –103 –106 Figure 6. Common–Emitter S–Parameters and Series Equivalent Input/Output Impedances Replaces MRF1000MA/D 3 PACKAGE DIMENSIONS F 4 1 2 STYLE 2: PIN 1. 2. 3. 4. EMITTER BASE EMITTER COLLECTOR 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- K D H SEATING PLANE A J C CASE 332A–03 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Replaces MRF1000MA/D 4