MRF10031

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10031/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF10031 30 W (PEAK) 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage (1) Emitter–Base Voltage Collector Current — Continuous (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 3.0 110 0.625 – 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 1.6 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 23% duty cycle) REV 6 1 MRF10031 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 55 55 3.5 — — — — — — — — 2.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) hFE 20 — — — FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%) Common–Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) Collector Efficiency (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) Load Mismatch (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz, VSWR = 10:1 All Phase Angles) GPB η ψ 9.0 40 9.5 45 — — dB % No Degradation in Output Power Z5 RF INPUT Z1 Z2 Z3 Z4 D.U.T. L1 C2 C3 C4 + + 36 Vdc RF OUTPUT Z6 Z7 Z8 Z9 C1 C1 — 75 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 1000 µF, 50 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Z1–Z9 — Microstrip, See Details Board Material — Teflon, Glass Laminate Dielectric Thickness = 0.030″ εr = 2.55, 2 Oz. Copper BROADBAND FIXTURE .628 .223 .118 1.350 1.020 .218 2.138 .215 .354 .389 .113 2.050 .100 .083 .083 .780 .733 .669 .083 1.210 .128 .400 Figure 1. Test Circuit REV 6 2 100 90 POUT, OUTPUT POWER (WATTS) 80 70 60 50 40 30 20 10 1 2 3 4 5 6 7 PIN, INPUT POWER (WATTS) 8 9 10 f = 960 MHz 1090 1215 VCC = 36 VOLTS Figure 2. Output Power versus Input Power 1025 f = 960 MHz Zin 1220 Zo = 10 Ω 1220 1090 1155 1025 f = 960 MHz Pout = 30 W Pk f MHz 960 1025 1090 1155 1220 Zin Ohms 2.05 + j5.24 2.67 + j6.34 24.0 + j7.14 25.5 + j6.24 25.7 + j4.34 VCC = 36 V ZOL* Ohms 22.9 - j2.35 2.55 - j1.35 2.52 - j0.95 22.6 - j0.65 22.8 - j0.35 ZOL* 1090 1155 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage, and frequency. Figure 3. Series Equivalent Input/Output Impedances REV 6 3 PACKAGE DIMENSIONS G Q 2 PL 0.25 (0.010) R K D 2 PL M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.145 0.160 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 3.69 4.06 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 –B– 0.25 (0.010) M TA M B M H E N F 2 PL 0.25 (0.010) –T– M TA M B M –A– C SEATING PLANE STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 376B–02 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 4