MRF10120

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching for Broadband Operation MRF10120 120 W (PEAK), 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355C–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 15 380 2.17 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 55 55 3.5 — — — — — — — — 25 Vdc Vdc Vdc mAdc NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 8 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — — FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%) Common–Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) Collector Efficiency (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) Load Mismatch (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz, VSWR = 3:1 All Phase Angles) GPB η ψ No Degradation in Output Power 7.6 50 8.5 55 — — dB % C2 Z5 L1 C3 C4 + + 36 Vdc - D.U.T. RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 C1 RF OUTPUT C1 — 270 pF 100 Mil Chip Capacitor C2 — 220 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 47 µF 50 V Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Z1–Z9 — Microstrip, See Details Board Material — Teflon®/Glass Laminate, Dielectric Thickness = 0.030″, εr = 2.55, 2 Oz. Copper 0.2 0.15 0.15 1.1 0.4 ALL DIMENSIONS IN INCHES 0.081 0.081 0.6 0.3 1.00 1.06 0.52 0.8 0.05 0.13 0.91 0.6 0.66 0.55 0.22 0.44 0.74 0.3 Figure 1. Test Circuit REV 8 2 200 Pout , OUTPUT POWER (WATTS pk) 200 Pout , OUTPUT POWER (WATTS pk) 150 150 100 f = 960 MHz VCC = 36 V 100 50 50 f = 1215 MHz VCC = 36 V 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Pin, INPUT POWER (WATTS pk) Pin, INPUT POWER (WATTS pk) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power f = 960 MHz 1025 1215 1090 1150 VCC = 36 V, Pout = 120 W f (MHz) 960 1025 1090 1150 1215 Zin (OHMS) 1.45 + j2.57 2.22 + j2.91 2.77 + j2.80 2.90 + j2.22 2.71 + j1.07 1150 1215 f = 960 MHz 1090 1025 VCC = 36 V, Pout = 120 W f (MHz) 960 1025 1090 1150 1215 ZOL* (OHMS) 5.33 + j1.37 4.59 - j0.307 3.74 - j0.612 2.43 - j0.492 1.80 - j0.385 ZOL* = Conjugate of the optimum load impedance into which the device out put operates at a given output power, voltage and frequency. Figure 4. Series Equivalent Input Impedances Figure 5. Series Equivalent Output Impedance REV 8 3 PACKAGE DIMENSIONS M –A– U 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q 2 PL 0.76 (0.030) M TA M B M R 3 –B– 2 K 2 PL D J H –T– SEATING PLANE N E C DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.890 0.910 0.375 0.395 0.150 0.165 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.185 0.215 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 3.81 4.19 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 4.70 5.46 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 355C–02 ISSUE C Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 8 4