PN2222A

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# PN2222A Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View NPN General Purpose Amplifier TO-92 A 40 75 6.0 20 10 Vdc Vdc Vdc nAdc nAdc B E C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdec, IE=0, f=100kHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) Noise Figure (IC=100µ Adc, VCE=10Vdc, RS=1.0kΩ f=1.0kHz) Delay Time (VCC=30Vdc, VBE=0.5Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ON CHARACTERISTICS hFE C 35 50 75 100 50 40 300 VCE(sat) 0.3 1.0 0.6 1.2 2.0 Vdc D VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 300 8.0 25 4.0 MHz pF pF dB DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 DIMENSIONS MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 G SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 10 25 225 60 ns ns ns ns MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com PN2222A DC Current Gain vs Collector Current 480 VCE = 5.0V 400 6 320 hFE 240 160 2 80 0 0.1 1 IC (mA) Collector Current vs Collector-Emitter Voltage 250 IB = 4mA 200 IC - (mA) 150 IB = 2mA 600 IB = 3mA PD(MAX) - (mW) 400 800 10 100 10 20 30 IC - (mA) 4 8 35µ A 30µ A 25µ A 20µ A 15µ A 10µ A 5µ A MCC Collector Current vs Collector-Emitter Voltage 40 50 VCE- (V) Maximum Power Dissipation vs Ambient Temperature TO-92 100 IB = 1mA 200 SOT-23 0 50 0 .5 1.0 VCE - (V) Contours of Constant Gain Bandwidth Product (fT) 24 20 16 VCE - (V) 12 8 4 0 0.1 pF 1.5 2.0 0 50 100 TA - (°C) 150 200 Input and Output Capacitance vs Reverse Bias Voltage 12 10 f = 1.0MHz CIB 8 6 COB 4 2 0.1 1.0 10 100 IC - (mA) *50MHz increments from 150 to 250MHz and 260MHz 1.0 Volts - (V) 10 www.mccsemi.com PN2222A Base Saturation Voltage vs Collector Current 1.4 1.0 .6 VBE(SAT) - (V) .1 .06 hfe=10 VCE(SAT) - (V) .1 .06 1.4 1.0 .6 MCC Collector Saturation Voltage vs Collector Current IC/IB = 10 hfe=20 TA = 125°C TA = 25°C .01 1.0 10 IC - (mA) 100 1000 .01 0.1 1.0 10 IC - (mA) 100 Base Saturation Voltage vs Collector Current 14 10 6 VBE(SAT) - (V) 1 0.6 TA=25°C TA=125°C 0.1 1.0 10 IC - (mA) 100 1000 .01 VCE(SAT) - (V) .1 .06 IC/IB = 10 4 1 .6 Collector Saturation Voltage vs Collector Current TA = 25°C hfe=20 hfe=10 0.1 1.0 IC - (mA) 10 100 Switching Times vs Collector Current 1000 IB1 = IB2 = IC/10 ts 100 T - (ns) tr 10 tf td 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com