NPN General Purpose Transistor PN2222A
NPN General Purpose Transistor
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA
Absolute Maximum Ratings (Tamb=25°C unless otherwise noted)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Symbol VCEO VCBO VEBO IC TSTG Value 40 75 6 1.0 -55~ 150 Units V V
V
A °C
Caution:
1. These ratings are based on a maximum junction temperature of 150°C 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-247-2232 Fax: (800)-TAITFAX (800)-TAITRON (800)-824-8329 (661)-257-6060 (661)-257-6415
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NPN General Purpose Transistor PN2222A
Electrical Characteristics (Tamb=25°C
Parameter Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics VCE=10V, IC =0.1mA VCE =10V, IC =1mA VCE =10V *, IC =10mA (Tamb=-55°C) VCE =10V *, IC =150mA VCE =10V *, IC =500mA IC =150mA,IB=15mA IC =500mA,IB=50mA IC =150mA, IB =15mA IC =500mA, IB =50mA 35 50 hFE 75 100 40 IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA,IC=0 VCB=60V,IE=0 VEB=3V,IC=0 BVCBO BVCEO BVEBO ICBO IEBO 75 40 6 0.01 10 V V V uA nA
unless otherwise noted)
Symbol Min. Max. Unit
Test Condition
DC Current Gain
300 0.3 1
Collector- Emitter Saturation Voltage * Base-Emitter Saturation Voltage *
VCE(sat) VBE(sat) 0.6
V V
1.2 2
* Pulse Test: Pulse Width≤300us, Duty Cycle≤2.0% Small Signal Characteristics Current Gain Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance Switching Characteristics Delay Time Rise Time Storage Time Fall Time VCC=30V, VEB(off)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA td tr ts tf 10 25 225 60 ns ns ns ns IC=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC =0, f=1MHz IC =20mA, VCB=20V, f=31.8MHz IC =100uA, VCE=10V Rs=1.0kΩ, f=1.0KHz IC =20mA, VCE=20V, f=300MHz fT Cobo Cibo rb’Cc NF Re(hie) 300 8.0 25 150 4.0 60 MHz pF pF pS dB Ω
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NPN General Purpose Transistor PN2222A
Thermal Characteristics Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient PD RθJC RθJA 625 5.0 83.3 200 mW mW/°C °C/W °C/W
Dimensions (Unit:mm)
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NPN General Purpose Transistor PN2222A
Typical Characteristics Curves
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NPN General Purpose Transistor PN2222A
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NPN General Purpose Transistor PN2222A
How to contact us:
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