TC1266VUA

TC1266 200mA PCI LDO Features • • • • • • • • • Glitch Free Transition Between Input Sources Automatic Input Source Selection External PMOS Bypass Switch Control Built-in 5V Detector 1% Regulated Output Voltage Accuracy 200mA Load Current Capability Kelvin Sense Input Low Dropout Voltage (240mV @ Full Load) Low Ground Current, Independent of Load General Description The TC1266 is an application-specific, low dropout regulator (LDO), specifically intended for use in PCI peripheral card applications complying with PCI Power Management (PCI 2.0). It provides an uninterrupted, 3.3V, 200mA (max) output voltage when the main (5V) or auxiliary (3.3V) input voltage supplies are present. The TC1266 consists of an LDO, a voltage threshold detector, external switchover logic and gate drive circuitry. It functions as a conventional LDO as long as the voltage on the main supply input (VIN) is above the lower threshold (3.90V typical). Should the voltage on VIN fall below the lower threshold, the LDO is disabled and an external P-channel MOSFET is automatically turned on, connecting the auxiliary supply input to VOUT, and ensuring an uninterrupted 3.3V output. The main supply is automatically selected, if both the main and auxiliary input supplies are present, and transition from one input supply to the other is ensured glitchfree. High integration, automatic secondary supply switchover, Kelvin sensing, and small size make the TC1266 the optimum LDO for PCI 2.0 applications. Applications • • • • PCMCIA PCI Network Interface Cards (NICs) CardbusTM Technology Device Selection Table Part Number Package Junction Temp. Range -5°C to +125°C TC1266VOA 8-Pin SOIC (Narrow) -5°C to +125°C TC1266VUA 8-Pin MSOP Functional Block Diagram VIN VAUX Package Type 8-Pin SOIC VIN NC VAUX GND 1 2 3 4 8 DR VOUT SENSE NC Detect DR Bandgap Reference TC1266 7 6 5 – E/A + GND VOUT SENSE 8-Pin MSOP VIN NC VAUX GND 1 2 3 4 8 7 DR VOUT SENSE NC TC1266 6 5 2002 Microchip Technology Inc. DS21377B-page 1 © TC1266 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Input Supply Voltage (VIN).............. -0.5V to +7V (Max) Auxiliary Supply Voltage (VAUX) ..... -0.5V to +7V (Max) LDO Output Current (IOUT)................................ 200mA Thermal Impedance, Junction-to-Ambient (θJA)............130°C/W for SOIC ESD Rating .......................................................... 2 KV Operating Temperature Range (TA)........ -5°C to +70°C Storage Temperature Range (TSTG) ...-65°C to +150°C TC1266 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µ F, unless otherwise noted. Boldface type specifications apply over full operating temperature range. Symbol VIN IGND IVIN VAUX IQ(AUX) Parameter Supply Voltage Ground Current Reverse Leakage from VAUX Supply Voltage Quiescent Current Min 4.3 — — — 3.0 — — — — IVAUX VTH(LO) VHYST VTH(HI) VOUT Reverse Leakage from VIN 5V Detector Low Threshold Voltage 5V Detector Hysteresis Voltage 5V Detector High Threshold Voltage LDO Output Voltage — — 3.75 — 200 — 4.0 — 3.234 3.000 IOUT REG(LINE) REG(LOAD) Note 1: 2: 3: 4: 5: 6: Typ 5.0 230 260 -0.1 3.3 50 — 60 — -0.1 3.90 — 260 — 4.15 — 3.300 — — — 0.05 — 0.05 — Max 5.5 450 500 -1.0 3.6 70 100 80 120 -1.0 — 4.05 — 300 — 4.30 — 3.366 — — — 0.5 — 0.5 Units V µA µA V µA µA µA V mV V V VAUX = 0V Test Conditions VAUX = 0V (Note 6) VAUX = 3.3V (Note 6) VAUX = 3.6V, VIN = 0V, IOUT = 0mA VIN = 0V, IOUT = 0mA VIN = 5V, IOUT= 0mA VIN = 5,5V, VAUX = 0V, IOUT = 0mA VIN Falling (Notes 2, 3) (Notes 2, 3) VIN Rising (Notes 2, 3) IOUT = 20mA 4.3V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 200mA 3.75V ≤ VIN ≤ 4.3V, 0mA ≤ IOUT ≤ 200mA (Note 4) Output Current Line Regulation Load Regulation 200 — -0.5 — -0.5 mA % % VIN = 4.3V to 5.5V IOUT = 0.1mA to 200mA Ensured by design. See 5V Detect Thresholds, Figure 4-1. Recommended source impedance for 5V supply: ≤ 0.25 Ω. This will ensure that IOUT x RSOURCE < VHYST , thus avoiding DR toggling during 5V detect threshold transitions. In Application Circuit, Figure 3-1. See Timing Diagram, Figure 4-2. Ground Current is independent of ILOAD. © DS21377B-page 2 2002 Microchip Technology Inc. TC1266 TC1266 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µ F, unless otherwise noted. Boldface type specifications apply over full operating temperature range. Symbol VDR Parameter Drive Voltage Min VIN - 0.2 VIN - 0.3 — — IDR(PK) tDH tDL Note 1: 2: 3: 4: 5: 6: Typ VIN - 0.1 — 35 — — — 4 — 0.6 — Max — — 150 200 — — — 8 1.5 3.0 Units V mV mA µsec µsec Test Conditions 4.3V ≤ VIN ≤ 5.5V, IDR = 200µA VIN < VTH(LO), IDR = 200µA Sinking: VIN = 3.75V, VDR = 1V; Sourcing: VIN = 4.3V, VIN – VDR = 2V CDR = 1.2nF, VIN ramping up, measured from VIN = VTH(HI) to VDR = 2V CDR = 1.2nF, VIN ramping down, measured from VIN = VTH(LO) to VDR = 2V Peak Drive Current Drive High Delay (Notes 1, 5) Drive Low Delay (Notes 1, 5) 7 6 — — — — Ensured by design. See 5V Detect Thresholds, Figure 4-1. Recommended source impedance for 5V supply: ≤ 0.25 Ω. This will ensure that IOUT x RSOURCE < VHYST , thus avoiding DR toggling during 5V detect threshold transitions. In Application Circuit, Figure 3-1. See Timing Diagram, Figure 4-2. Ground Current is independent of ILOAD. 2002 Microchip Technology Inc. DS21377B-page 3 © TC1266 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (8-Pin SOIC) (8-Pin MSOP) 1 2 3 4 5 6 7 8 PIN FUNCTION TABLE Symbol VIN NC VAUX GND NC SENSE VOUT DR Description Main input supply for the TC1266, nominally 5V. Not connected. Auxiliary input supply, nominally 3.3V. Logic and power ground. Not connected. Sense pin for VOUT. Connect to VOUT at the load to minimize voltage drop across PCB traces. LDO 3.3V output. Driver output for external P-channel MOSFET pass element. 3.0 DETAILED DESCRIPTION APPLICATION CIRCUIT Q1 FIGURE 3-1: U1 5V 1 VIN DR 8 2 NC 3.3V C2 4.7µF C1 0.1µF C3 0.1µF 3V AUX 4 GND TC1266 VOUT 7 6 C4 4.7µF C5 0.1µF 3.3V SENSE NC 5 NOTE: External switch (Q1): use Motorola MGSF1P02ELT1 or equivalent (PMOS, typical Gate Threshold Voltage = 1V, typical RDS(ON) = 0.4Ω at VGS = 2.5V) © DS21377B-page 4 2002 Microchip Technology Inc. TC1266 4.0 4.1 THERMAL CONSIDERATIONS Thermal Shutdown Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 5V ± 5% VOUTMIN = 3.217V ILOADMAX = 200mA TJMAX TAMAX θJA = 125°C = 70°C = 130°C/W (SOIC) Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 4.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = (5.25V - 3.217V) 200mA = 407mW Maximum allowable power dissipation: PDMAX = (TJMAX – TAMAX) θJA = (125 – 70) 130 = 423mW In this example, the TC1266 dissipates a maximum of 407mW; below the allowable limit of 423mW. EQUATION 4-1: PD ≈ (VINMAX – VOUTMIN)ILOADMAX Where: PD = VINMAX = VOUTMIN = ILOADMAX = Worst case actual power dissipation Maximum voltage on VIN Minimum regulator output voltage Maximum output (load) current The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). EQUATION 4-2: PDMAX = (T JMAX – TAMAX) θJA Where all terms are previously defined. 2002 Microchip Technology Inc. DS21377B-page 5 © TC1266 FIGURE 4-1: 5V DETECT THRESHOLD 4.4V VHYST VIN VTH(HI) VTH(LO) 3.65V DR 2.0V 2.0V NOTE: VIN rise and fall times (10% to 90%) to be ≥ 100µsec. FIGURE 4-2: TIMING DIAGRAM 4.4V VIN 3.65V tDH tDL DR 2.0V 2.0V NOTE: VIN rise and fall times (10% to 90%) to be ≤ 0.1µsec. © DS21377B-page 6 2002 Microchip Technology Inc. TC1266 5.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. IQ vs. VIN vs. Junction Temperature 0.45 0.40 0.35 0.30 IQ (mA) 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 VIN (V) 4 5 6 +25°C -5°C IO = 0.1mA VAUX = 0V +125°C IQ vs. VIN vs. Junction Temperature 0.45 0.40 0.35 0.30 IQ (mA) 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 VIN (V) 4 5 6 -5°C +25°C IO = 0.1mA VAUX = 3.3V +125°C IQ (Aux) vs. VAUX vs. Junction Temperature 0.35 0.30 IO = 0mA VAUX = 0V IQ (Aux) (mA) IQ (Aux) vs. VAUX vs. Junction Temperature 0.35 0.30 0.25 0.20 0.15 0.10 0.05 +125°C +25°C IO = 0mA VAUX = 5V -5°C IQ (Aux) (mA) 0.25 0.20 0.15 0.10 0.05 0.00 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VAUX (V) 3 3.3 3.6 +25°C +125°C -5°C 0.00 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VAUX (V) 3 3.3 3.6 LDO Output Voltage vs. Junction Temperature 3.34 3.33 3.32 VOUT (V) 3.31 3.30 3.29 3.28 3.27 3.26 -50 -25 0 25 50 75 100 125 JUNCTION TEMPERATURE °C IO = 200mA VIN = 5V 2002 Microchip Technology Inc. DS21377B-page 7 © TC1266 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Drive High Delay Drive Low Delay VIN steps from 0.8V to 5V See application circuit on Page 5 ILOAD = 200mA Trace 1: VIN stepping for 0.8V to 5V Trace 2: DR TH(HI) TDH = < 4 S Trace 1: VIN stepping for 5.5V to 0V R TDL = < 600nS VO (min) with VIN Rising VO (min) with VIN Falling Notice no voltage spikes during transition from VAUX to LDO output VOUT voltage difference is IOUT x RDS(ON) and variations between VAUX supply and LDO output voltage VOUT voltage difference is IOUT x RDS(ON) + voltage difference from LDO to VAUX supply Trace 1: VIN – 3A charging a 1500µF capacitor Trace 2: DR going high at VTH(HI) Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.24V ILOAD = 200µA Trace 1: VIN – discharging a 1500µF capacitor Trace 2: DR going low at VTH(LO) Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.14V ILOAD = 200µA © DS21377B-page 8 2002 Microchip Technology Inc. TC1266 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Load Response Rising Edge Load Response Falling Edge ILOAD = 200mA ILOAD = 200mA ILOAD = 3mA ILOAD = 3mA VOUT AC 60mV/div See application circuit on Page 5 See application circuit on Page 5 4 2002 Microchip Technology Inc. DS21377B-page 9 © TC1266 6.0 6.1 PACKAGING INFORMATION Package Marking Information Package marking data not available at this time. 6.2 Taping Form Component Taping Orientation for 8-Pin MSOP Devices User Direction of Feed PIN 1 W P Standard Reel Component Orientation for TR Suffix Device Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8-Pin MSOP 12 mm 8 mm 2500 13 in Component Taping Orientation for 8-Pin SOIC (Narrow) Devices User Direction of Feed PIN 1 W P Standard Reel Component Orientation for TR Suffix Device Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8-Pin SOIC (N) 12 mm 8 mm 2500 13 in © DS21377B-page 10 2002 Microchip Technology Inc. TC1266 6.3 Package Dimensions 8-Pin MSOP PIN 1 .122 (3.10) .114 (2.90) .197 (5.00) .189 (4.80) .026 (0.65) TYP. .122 (3.10) .114 (2.90) .043 (1.10) MAX. .016 (0.40) .010 (0.25) .006 (0.15) .002 (0.05) 6° MAX. .028 (0.70) .016 (0.40) .008 (0.20) .005 (0.13) Dimensions: inches (mm) 8-Pin SOIC PIN 1 .157 (3.99) .150 (3.81) .244 (6.20) .228 (5.79) .050 (1.27) TYP. .197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) 8° MAX. . .050 (1.27) .016 (0.40) Dimensions: inches (mm) .010 (0.25) .007 (0.18) 2002 Microchip Technology Inc. DS21377B-page 11 © TC1266 NOTES: © DS21377B-page 12 2002 Microchip Technology Inc. TC1266 SALES AND SUPPORT Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21377B-page 13 TC1266 NOTES: DS21377B-page 14  2002 Microchip Technology Inc. TC1266 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. 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