1N482B

High Conductance Use Advantages 1N482B thru 1N4150 1N486B DO-35 Diodes Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are important. Compatible with all major automatic pick and place mounting equipment. May be used on ceramic boards along with high temperature IR solder reflow. Features D O -35 G lass P ack age Humidity proof glass Thermally matched system No thermal fatigue No applications restrictions Sigma Bond™ plated contacts 100% guaranteed solderability Problem free assembly Six Sigma quality LL-35 MiniMELF types available Lead Dia. 0.018-0.022" 0.458-0.558 mm 1.0" 25.4 m m (M in.) Absolute Maximum Ratings Dia. Leng th 0.06-0.09" 0.120-.200" 3.05-5.08- mm 1.53-2.28 mm Symbol Value Unit Average Forward Rectified Current at TAmbient = 25 o C IAV 0.65 Amp Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine) IFSM 2.0 Amps Junction Temperature Range Tj -65 to +200 o -55 to +200 o 250 mW Storage Temperature Range TS Max. Average Power Dissipation Pdiss C C Characteristics at T = 25 oC Type 1N482B 1N483B 1N484B 1N485B 1N486B Peak Inverse Voltage (MIN.) (PIV) Maximum Average Rectified Current (IO) Maximum Forward Voltage Drop (VF) @ 0.1A Volts 30 60 125 175 225 Amps 0.2 0.2 0.2 0.2 0.2 Volts 1.0 1.0 1.0 1.0 1.0 Maximum Leakage Current (IR) @ PIV 25 oC 150 oC µA 0.025 0.025 0.025 0.025 0.025 µA 5 5 5 5 5 LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N".. 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Minimum Saturation Voltage (@0.1 mA) Volts 40 80 150 200 250