2N3810

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC One Section 1 Total Power Dissipation @ TA = +25°C PT TJ, Tstg 200 Value 60 60 5.0 50 Both Sections 2 350 mW °C Unit Vdc Vdc Vdc mAdc Operating & Storage Junction Temperature Range Note: 1. 2. -65 to +200 TO-78 Derate linearly 1.143mW/°C for TA > +25°C (one section) Derate linearly 2.00mW/°C for TA > +25°C (both sections) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100μAdc Collector-Base Cutoff Current VCB = 50Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc V(BR)CEO 60 Vdc Symbol Min. Max. Unit ICBO 10 10 10 10 ηAdc μAdc ηAdc μAdc IEBO T4-LDS-0118 Rev. 1 (091095) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc IC = 1.0μAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc 2N3810, 2N3810L , 2N3810U hFE 100 150 150 125 450 450 Symbol Min. Max. Unit 2N3811, 2N3811L, 2N3811U hFE 75 225 300 300 250 900 900 Collector-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc Base-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc Base-Emitter Non-Saturation Voltage VCE = 5.0Adc, IC = 100μAdc VBE 0.7 Vdc VBE(sat) 0.7 0.8 Vdc VCE(sat) 0.2 0.25 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short Circuit Input Impedance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hoe 5.0 60 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hje 3.0 3.0 30 40 kΩ 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hfe 150 300 600 900 |hfe| 1.0 1.0 5.0 μmhos Cobo 5.0 pF CIbo 8.0 pF T4-LDS-0118 Rev. 1 (091095) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DYNAMIC CHARACTERISTICS (cont.) Parameters / Test Conditions Noise Figure IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3810, L, U 2N3810, L, U 2N3810, L, U 2N3810, L, U 2N3811, L, U 2N3811, L, U 2N3811, L, U 2N3811, L, U F1 F2 F3 F4 F1 F2 F3 F4 7.0 3.0 2.5 3.5 4.0 1.5 2.0 2.5 dB dB Symbol Min. Max. Unit T4-LDS-0118 Rev. 1 (091095) Page 3 of 3