2N3810L

2N3810L Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3810LJ) • JANTX level (2N3810LJX) • JANTXV level (2N3810LJV) • JANS level (2N3810LJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Matched Dual transistors • PNP silicon transistor Features • • • • Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Rating 60 60 5 50 300 one section 600 both sections 1.71one section 3.43 both sections -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/°C °C °C Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N3810L Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE2 hFE3 hFE4 hFE5 hFE6 hFE3-1/hFE3-2 VBE |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 10 µA, VCE = 5 Volts IC = 100 µA, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 µA, VCE = 5 Volts TA = -55°C IC = 100 µA, VCE = 5 Volts VCE = 5 Volts, IC = 100 µA VCE = 5 Volts, IC = 10 µA VCE = 5 Volts, IC = 100 µA VCE = 5 Volts, IC = 10 mA IC = 100 µA, IB = 10 µA IC = 1 mA, IB = 100 µA IC = 100 µA, IB = 10 µA IC = 1 mA, IB = 100 µA Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 100 µA VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150°C VEB = 5 Volts VEB = 4 Volts Min 60 10 10 10 10 10 Typ Max Units Volts µA nA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min 100 150 150 125 60 0.9 Typ Max 450 450 Units DC Current Gain Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1.0 0.7 5 3 5 0.7 0.8 0.20 0.25 Volts mVolts mVolts mVolts Volts Volts Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N3810L Silicon PNP Transistor Data Sheet Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE1| |hFE2| hFE COBO CIBO Test Conditions VCE = 5 Volts, IC = 500 µA, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 100 µA, Rg = 3 kΩ f = 100 Hz f = 1 kHz f = 10 kHz VCE = 10 Volts, IC = 100 µA, Rg = 3 kΩ 10 Hz < f < 15.7 kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC=100µA, f=1kHz Min 1 1 150 5 600 5 8 pF pF Typ Max Units Noise Figure NF1 N F2 N F3 NF hie hoe hre 7 3 2.5 3.5 3 5 30 60 25x10 -4 dB Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio dB kΩ µΩ Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com