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2N5109

2N5109

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    TO39-3

  • 描述:

    TRANS RF NPN 20V 400MA TO-39

  • 数据手册
  • 价格&库存
2N5109 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC (1) Derate above 25ºC 2.5 20 Watts mW/ ºC Note 1. Total Device dissipation at TA = 25ºC is 1 Watt. MSC1304.PDF 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 20 40 Value Typ. Max. 20 100 Unit Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc) 5 40 120 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Value Typ. 1200 Max. Unit MHz MSC1304.PDF 10-25-99 2N5109 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz Value Typ. 12 11.2 10.5 Max. Unit dB dB dB G U max 9.5 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .082 .255 .288 .298 .368 .404 .462 .. .503 .593 .655 ∠φ 167 172 132 137 126 121 116 110 105 95 S21 |S21| 6.77 3.56 2.39 1.91 1.61 1.38 1.28 1.21 1.11 1.02 ∠φ 87 71 61 50 41 33 27 18 12 9.8 S12 |S12| .073 .135 .217 .271 .320 .390 .477 .513 .535 .604 ∠φ 79 71 70 62 55 54 48 38 33 35 S22 |S22| .347 .259 .247 .216 .172 .174 .163 .190 .246 .320 ∠φ -30 -35 -46 -76 -94 -115 -145 176 140 122 MSC1304.PDF 10-25-99 2N5109 RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 17 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 Pout (watts) Freq (MHz) NF (dB) NF IC (mA) NF VCE Package Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 15 11 15.5 14 15 11 GN (dB) 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 MACRO X MACRO X MACRO T MACRO T TO-39 TO-39 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 NPN 1000 NPN 1000 NPN 1000 NPN 1000 PNP NPN 1.3 1.5 2.5 3 5 10 2 2 6 6 5 10 14 10 8 10 17 8000 8000 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 0.45 1 1 1 2 10 10 12 15 70 70 100 70 35 30 400 400 11 5000 12.5 5000 14 13.5 1400 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 2 4 3 3 3 1 1 8 Macro T MSC1304.PDF 10-25-99 Macro X Power Macro SO-8 2N5109 MSC1304.PDF 10-25-99
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