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2N5153

2N5153

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N5153 - PNP POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N5153 数据手册
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 6.67 mW/0C for TA > +250C 4) Derate linearly 80 mW/0C for TC > +250C 0 2N5151, 2N5153 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO IEBO Min. 80 1.0 1.0 1.0 1.0 50 Max. Unit Vdc µAdc mAdc µAdc mAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, Ic = 0 VEB = 5.5 Vdc, Ic = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0 ICES ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5151, 2N5153 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5 Vdc IC = 2.5 Adc, VCE = 5 Vdc 2N5151 2N5153 IC = 5 Adc, VCE = 5 Vdc 2N5151 2N5153 Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 Adc IC = 5 Adc, IB = 500 Adc Base-Emitter Voltage nonsaturated VCE = 5 Vdc, IC = 2.5 Adc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc VCE(sat) hFE 2N5151 2N5153 20 50 30 70 20 40 0.75 1.5 1.45 1.45 2.2 Vdc Vdc Vdc 90 200 VBE VBE(sat) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz 2N5151 2N5153 Common-Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz 2N5151 2N5151 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz hfe 6 7 hfe 20 50 250 pF Cobo SWITCHING CHARACTERISTICS Turn-On Time IC = 5 Adc, IB1= 500 mAdc Turn-Off Time RL = 6Ω Storage Time IB2 = -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc t on 0.5 1.5 1.4 0.5 µs µs µs µs t off t t s f SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t p= 1.0 s Test 1 VCE = 5.8Vdc, IC = 2.0 Adc Test 2 VCE = 32 Vdc, IC = 340 mAdc Test 3 VCE = 80 Vdc, IC = 20 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
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