2N5153U3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS 2N5151 2N5151L 2N5151U3 2N5153 2N5153L 2N5153U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation 2N5151, 2N5153, L 2N5151, 2N5153, L 2N5151U3, 2N5153U3 2N5151U3, 2N5153U3 @ TA = +25°C (1) @ TC = +25°C (2) @ TA = +25°C (3) @ TC = +25°C (4) Symbol VCEO VCBO VEBO IC Value 80 100 5.5 2.0 1.0 10 1.16 100 -65 to +200 10 1.75 (U3) Unit Vdc Vdc Vdc Adc PT W TO-5 2N5151L, 2N5153L (See Figure 1) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case Note: 1) 2) 3) 4) Derate linearly 5.7mW/°C for TA > +25° Derate linearly 66.7mW/°C for TA > +25° Derate linearly 6.63mW/°C for TA > +25° Derate linearly 571mW/°C for TA > +25° TJ , Tstg RθJC °C °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40Vdc, IB = 0 V(BR)CEO 80 Vdc Symbol Min. Max. Unit TO-39 (TO-205AD) 2N5151, 2N5153 IEBO 1.0 1.0 µAdc mAdc ICES 1.0 1.0 50 µAdc mAdc µAdc U-3 2N5151U3, 2N5153U3 ICEO T4-LDS-0132 Rev. 1 (091476) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc IC = 2.5Adc, VCE = 5Vdc IC = 5Adc, VCE = 5Vdc Symbol Min. Max. Unit 2N5151 2N5153 2N5151 2N5153 2N5151 2N5153 hFE 20 50 30 70 20 40 90 200 Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc Base-Emitter Voltage Non-Saturation IC = 2.5Adc, VCE = 5Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75 1.5 1.45 Vdc VBE Vdc VBE(sat) 1.45 2.2 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5151 2N5153 Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 1kHz 2N5151 2N5153 Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz |hfe| 6 7 hfe Cobo 20 50 250 pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc Turn-Off Time IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc Symbol Min. Max. Unit μs ton 0.5 toff 1.5 μs T4-LDS-0132 Rev. 1 (091476) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 SWITCHING CHARACTERISTICS (cont.) Parameters / Test Conditions Storage Time Fall Time IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc Symbol ts tf Min. Max. 1.4 0.5 Unit μs μs SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, tP = 1.0s Test 1 VCE = 5.0Vdc, IC = 2.0Adc Test 2 VCE = 32Vdc, IC = 310mAdc Test 3 VCE = 80Vdc, IC = 14.5mAdc FIGURE 1 (TO-5, TO-39) PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r Dimensions Inches Millimeters Min Max Min Max .305 .240 .335 .335 .260 .370 7.75 6.10 8.51 8.51 6.60 9.40 Notes 6 .200 TP .016 .021 5.08 TP 0.41 0.53 7 8, 9 See notes 8, 9, 12, 13 .016 .019 .050 .250 .050 .029 .028 .045 .034 .010 45° TP .100 0.74 0.71 6.35 1.27 1.14 0.86 0.25 45° TP 2.54 0.41 0.48 1.27 8, 9 8, 9 8, 9 6 4, 5 3 11 7 α P T4-LDS-0132 Rev. 1 (091476) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 NOTES: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). TL measured from maximum HD. Outline in this zone is not controlled. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be electrically and mechanically connected to the case. r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum. For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum. Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 = collector. FIGURE 2 (U3) PACKAGE DIMMENSIONS Symbol Min BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 .395 .291 .1085 .010 .220 .115 Dimensions Inches Max .405 .301 .1205 .020 .230 .125 Millimeters Min 10.04 7.40 2.76 0.25 5.59 2.93 Max 10.28 7.64 3.06 0.51 5.84 3.17 3.81 BSC 1.91 BSC .291 .100 7.14 2.29 0.762 0.762 7.39 2.54 .150 BSC .075 BSC .281 .090 .030 .030 NOTES: 1 2 3 Dimensions are in inches. Millimeters are given for general information only. Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter T4-LDS-0132 Rev. 1 (091476) Page 4 of 4