APT29F100B2 APT29F100L
1000V, 29A, 0.46Ω Max, trr ≤270ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
T-MaxTM
TO-264
APT29F100B2
APT29F100L
D
Single die FREDFET
G S
FEATURES
• Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 29 18 120 ±30 1875 16
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 1040 0.12 Unit W °C/W
°C
9-2006 050-8079 Rev A
oz g in·lbf N·m
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS
TJ = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 16A
APT29F100B2_L
Typ 1.15 Max Unit V V/°C Ω V mV/°C µA nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25°C TJ = 125°C
3
0.39 4 -10
0.46 5 250 1000 ±100
VGS = ±30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25°C unless otherwise specified
Test Conditions VDS = 50V, ID = 16A
VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 34 8500 115 715 290
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 667V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A RG = 2.2Ω 6 , VGG = 15V
150 260 46 125 39 35 130 33 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 29
Unit A
G S
TJ = 25°C TJ = 125°C
120 230 500 13 35 11 15 1.1 270 640 V ns µC A 25 V/ns
ISD = 16A, TJ = 25°C, VGS = 0V
ISD = 16A 3 diSD/dt = 100A/µs
TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
ISD ≤ 16A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 9-2006 050-8079 Rev A
80 70 ID, DRAIN CURRENT (A) 60 50 40
V
GS
= 10V
30 25 ID, DRIAN CURRENT (A)
APT29F100B2_L
T = 125°C
J
TJ = -55°C
V
GS
= 6, 7, 8 & 9V
20 15 10 5 0
5V
TJ = 25°C
30 20 10 0
TJ = 150°C
TJ = 125°C
4.5V
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 16A
0
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
120 100 ID, DRAIN CURRENT (A) 80 60 40
VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @