APT29F80J

APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. S G D S SO 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT29F80J G D Single die FREDFET S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 31 19 173 ±30 1979 24 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Min Typ Max 543 0.23 Unit W °C/W °C V Rev B 5-2009 050-8171 0.15 -55 2500 1.03 29.2 10 1.1 150 oz g in·lbf N·m Package Weight Torque Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25°C TJ = 125°C APT29F80J Typ 1.41 0.19 4 -10 Max Unit V V/°C Ω V mV/°C μA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.21 5 250 1000 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 43 9326 159 927 438 Max Unit S pF VGS = 0V, VDS = 0V to 533V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 24A, VDS = 400V Resistive Switching VDD = 533V, ID = 24A RG = 2.2Ω 6 , VGG = 15V 217 303 51 155 53 76 231 67 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 31 Unit G S A 173 1.0 370 710 1.91 5.18 12 18 25 V ns μC A V/ns ISD = 24A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 24A 3 diSD/dt = 100A/μs TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 100V, TJ = 125°C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5-2009 050-8171 Rev B Typical Performance Curves 100 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 0 TJ= 150°C TJ= 125°C ID, DRAIN CURRENT (A) TJ= 25°C V GE APT29F80J 60 TJ= 55°C 50 40 30 20 10 5V T = 125°C J = 10V 10 & 15V 6 & 6.5V 5.5V 4.5V 4V 0 5 10 15 20 25 30 35 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Output Characteristics VDS> ID(ON) x RDS(ON) MAX. RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 NORMALIZED TO VGS = 10V @ 24A 160 140 120 100 80 60 40 TJ= 125°C 20 TJ= 25°C 250 μSEC. PULSE TEST @