APTGT400SK120D3G

APTGT400SK120D3G Buck Chopper Trench + Field Stop IGBT Power Module 3 VCES = 1200V IC = 400A @ Tc = 80°C Q1 4 5 Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant 1 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 580 400 800 ±20 2100 800A @ 1100V Unit V A V W September, 2008 1-5 APTGT400SK120D3G – Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT400SK120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 750 2.1 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=±15V, IC=400A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 400A RG = 1.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 400A RG = 1.8Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 400A Tj = 125°C RG = 1.8Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Typ 29 1.3 3.7 250 90 550 130 300 100 650 180 36 62 1600 A ns Max Unit nF µC ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 600V IF = 400A VGE = 0V Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 750 1000 400 1.6 1.6 170 280 36 72 20 36 2.1 Unit V µA A V ns µC mJ September, 2008 2-5 APTGT400SK120D3G – Rev 0 di/dt =4000A/µs www.microsemi.com APTGT400SK120D3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.06 0.13 150 125 125 5 5 350 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol