APTGT400SK120G
Buck chopper Fast Trench + Field Stop IGBT® Power Module
VBUS Q1 G1
VCES = 1200V IC = 400A @ Tc = 80°C
Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
E1
OUT
CR2
0/VBUS
G1 E1
VBUS
0/VBUS
OUT
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
800A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT400SK120G – Rev 1
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors.
July, 2006
Max ratings 1200 560 * 400 800 ±20 1785
Unit V A V W
APTGT400SK120G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 400A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 750 2.1 6.5 800 Unit µA V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 400A R G = 1.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 400A R G = 1.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 400A Tj = 125°C R G = 1.2Ω
Min
Typ 28 1.6 1.2 260 30 420 80 290 50 520 100 40
Max
Unit nF
ns
ns
mJ 40
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=1200V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min 1200
Typ
Max 700 900
Unit V µA A
IF = 400A VGE = 0 V
400 1.6 1.6 170 280 36 72 20 36
2.1
V ns µC mJ
IF = 400A VR = 600V
di/dt =4000A/µs
www.microsemi.com
2-5
APTGT400SK120G – Rev 1
July, 2006
APTGT400SK120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.13 150 125 100 5 3.5 280 Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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