APTM120H65FT3G

APTM120H65FT3G Full bridge MOSFET Power Module VDSS = 1200V RDSon = 650mΩ typ @ Tj = 25°C ID = 16A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration • • • • 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 1200 16 12 105 ±30 780 390 14 Unit V August, 2009 1–5 APTM120H65FT3G – Rev 0 A V mΩ W A Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM120H65FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 250 1000 780 5 ±100 Unit µA mΩ V nA 3 650 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2Ω Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 14A IS = - 14A VR = 100V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ Max 16 12 1.1 25 335 640 Unit A V V/ns ns µC 1.72 4.67 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 14A di/dt ≤ 1000A/µs VDD ≤ 800V Tj ≤ 125°C www.microsemi.com 2–5 APTM120H65FT3G – Rev 0 August, 2009 APTM120H65FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C RDSon, Drain to Source ON resistance 15 10 TJ=25°C 5 0 0 1 2 3 4 5 6 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 VDS=240V VDS=600V Ciss 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VDS=960V ID=14A TJ=25°C C, Capacitance (pF) 1000 Coss 100 Crss 10 1 VDS, Drain to Source Voltage (V) August, 2009 APTM120H65FT3G – Rev 0 0 50 100 150 200 www.microsemi.com 4–5 APTM120H65FT3G Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 60 50 40 TJ=125°C 30 20 10 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (°C/W) 0.3 0.25 0.2 0.15 0.9 0.7 0.5 0.3 0.1 0.05 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM120H65FT3G – Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2009