APTM50DAM19G

APTM50DAM19G Boost chopper MOSFET Power Module VBUS CR1 VDSS = 500V RDSon = 19mΩ typ @ Tj = 25°C ID = 163A @ Tc = 25°C Applicatio n • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS • • • VBUS 0/VBUS O UT Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DAM19G – Rev 3 July, 2006 Tc = 25°C Max ratings 500 163 122 652 ±30 22.5 1136 46 50 2500 Unit V A V mΩ W A APTM50DAM19G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Typ Tj = 25°C T j = 125°C VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0 V 19 3 Max 200 1000 22.5 5 ±200 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A R G = 1Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, R G = 1 Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, R G = 1 Ω Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 Max Unit nF nC ns µJ µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=600V IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt = 400A/µs Min 600 Tj = 25°C Tj = 125°C Tc = 70°C Typ Max 350 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 120 1.6 1.9 1.4 130 170 440 1840 1.8 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM50DAM19G – Rev 3 July, 2006 trr Reverse Recovery Time ns APTM50DAM19G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.46 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 500 400 300 200 100 0 0 8V 7.5V 7V 6.5V 6V 5.5V 400 300 200 T J=25°C 100 T J=125°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A) Normalized to VGS=10V @ 81.5A VGS=10V TJ=-55°C 25 0 1 2 3 4 5 6 7 8 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0 RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 V GS=20V 100 200 300 400 25 www.microsemi.com 4–6 APTM50DAM19G – Rev 3 July, 2006 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (°C) 150 APTM50DAM19G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) 1000 limited by R DSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS =10V ID=81.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 100µs 100 limited by RDSon 10 Single pulse TJ =150°C TC=25°C 1 1ms 10ms 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=163A 12 T =25°C J V =250V DS 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 VDS=400V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 5–6 APTM50DAM19G – Rev 3 APTM50DAM19G Delay Times vs Current 100 td(off) Rise and Fall times vs Current 120 100 VDS=333V RG=1Ω TJ=125°C L=100µH t d(on) and td(off) (ns) 80 60 40 20 0 20 60 100 140 180 220 ID, Drain Current (A) 260 V DS =333V RG =1Ω T J=125°C L=100µH td(on) tf tr and t f (ns) 80 60 40 20 0 20 tr 60 100 140 180 220 260 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 10 Switching Energy (mJ) 16 Switching Energy (mJ) 8 6 4 2 0 VDS=333V RG=1Ω T J=125°C L=100µH Eon 14 12 10 8 6 4 2 0 0 V DS=333V ID=163A T J=125°C L=100µH Eoff Eoff Eon Eoff 20 60 100 140 180 220 260 2.5 5 7.5 10 12.5 I D, Drain Current (A) Operating Frequency vs Drain Current Gate Resistance (Ohms) Source to Drain Diode Forward Voltage TJ=150°C 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C ZCS ZVS IDR, Reverse Drain Current (A) 400 1000 100 10 T J=25°C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 100 120 140 ID, Drain Current (A) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DAM19G – Rev 3 M icrosemi reserves the right to change, without notice, the specifications and information contained herein