USB0812C-A

USB0803C-A thru USB0824C-A, e3 Bidirectional TVSarray ™ SCOTTSDALE DIVISION DESCRIPTION This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration giving protection to 2 Bidirectional data or interface lines. It is designed for use in applications where very low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning. It is also available with either Tin-Lead plated terminations or as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix to the part number*. Using the schematic on the second page, pins 1 & 2 are tied together for the first protected line, and pins 7 & 8 are tied together to the ground. The same would then occur for a second protected line where pins 3 & 4 are tied together and pins 5 & 6 are tied together to the ground. These may also be switched in polarity connections since the electrical features are the same in each antiparallel (opposite facing) leg when the pins are tied together in this manner for bidirectional protection. These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS (USB) and I/O transceivers. The USB08XXC-A product provides board level protection from static electricity and other induced voltage surges that can damage or upset sensitive circuitry. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM SO–8 FEATURES • • • • • • • Protects up to 2 bi-directional lines Surge protection per IEC 61000-4-2, IEC 61000-4-4 Provides electrically isolated protection UL 94V-0 Flammability Classification RoHS Compliant devices available by adding “e3” suffix LOW CAPACITANCE 5 pF per line pair LOW LEAKAGE • • • • • • APPLICATIONS / BENEFITS EIA-RS485 data rates: 5 Mbs 10 Base T Ethernet USB date rate: 900 Mbs Tape & Reel per EIA Standard 481 13 inch reel; 2,500 pieces (OPTIONAL) Carrier tubes; 95 pcs (STANDARD) MAXIMUM RATINGS • • • • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Peak Pulse Power: 500 watts (8/20 µs, Figure 1) Pulse Repetition Rate: < .01% Solder Temperature: 260°C for 10 s (maximum) MECHANICAL AND PACKAGING • Molded SO-8 Surface Mount • Weight 0.066 grams (approximate) • Marking: Logo, device marking code*, date code • Pin #1 defined by dot on top of package ELECTRICAL CHARACTERISTICS STAND OFF VOLTAGE VWM VOLTS MAX USB0803C-A USB0805C-A USB0812C-A USB0815C-A USB0824C-A U3CA U5CA U12CA U15CA U24CA 3.3 5.0 12.0 15.0 24.0 BREAKDOWN VOLTAGE VBR @1 mA VOLTS MIN 4 6.0 13.3 16.7 26.7 CLAMPING VOLTAGE VC @ 1 Amp (Figure 2) VOLTS MAX 8 10.8 19 24 43 CLAMPING VOLTAGE VC @ 5 Amp (Figure 2) VOLTS MAX 11 13 26 32 57 STANDBY CURRENT ID @ VWM µA MAX 200 40 1 1 1 CAPACITANCE (f=1 MHz) C @0V pF MAX 5 5 5 5 5 TEMPERATURE COEFFICIENT OF VBR αVBR PART NUMBER DEVICE MARKING* USB08xxC-A, e3 mV/°C MAX -5 1 8 11 28 * Device marking has an e3 suffix added for RoHS Compliant option, e.g. U3CAe3, U5CAe3, U12CAe3, U15CAe3, or U24CAe3 Copyright © 2005 6-29-2005 REV H Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 USB0803C-A thru USB0824C-A, e3 Bidirectional TVSarray ™ SCOTTSDALE DIVISION Symbol VWM VBR VC ID C SYMBOLS & DEFINITIONS Definition Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range. Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse time of 20 µs. Standby Current: Leakage current at VWM. Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. W WW . Microsemi . C OM GRAPHS Ppp Peak Pulse Power (W) 8/20µs 500W Pulse Figure 1 Peak Pulse Power Vs Pulse Time t = µsec Figure 2 Pulse Wave Form OUTLINE AND SCHEMATIC DIM A B C D F G J K L P INCHES MIN MAX 0.188 0.197 0.150 0.158 0.053 0.069 0.011 0.021 0.0160 0.050 0.050 BSC 0.006 0.010 0.004 0.008 0.189 0.206 0.228 0.244 MILLIMETERS MIN MAX 4.77 5.00 3.81 4.01 1.35 1.75 0.28 0.53 0.41 1.27 1.27 BSC 0.15 0.25 0.10 0.20 4.80 5.23 5.79 6.19 PAD LAYOUT USB08xxC-A, e3 OUTLINE Copyright © 2005 6-29-2005 REV H SCHEMATIC Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2