VS-E5TX0812-M3

VS-E5TX0812-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® G5 FEATURES Base cathode 2 • Hyperfast and optimized Qrr 2 • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation 1 • 175 °C maximum operating junction temperature 1 Cathode 3 3 Anode • Polyimide passivation TO-220AC 2L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. Application Notes PRIMARY CHARACTERISTICS IF(AV) 8A VR 1200 V VF at IF at 125 °C 2.1 V trr 27 ns TJ max. 175 °C Package TO-220AC 2L Circuit configuration Single MECHANICAL DATA Case: TO-220AC 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: as per marking device details ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 121 °C, D = 0.50 8 Repetitive peak forward current IFRM TC = 121 °C, D = 0.50, f = 20 kHz 16 Non-repetitive peak surge current IFSM TC = 45 °C, tp = 10 ms, sine wave 60 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 8 A - 2.5 3.4 IR = 100 μA IF = 8 A, TJ = 125 °C - 2.1 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 5 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 30-Mar-2022 Document Number: 96607 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX0812-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 27 38 TJ = 25 °C - 87 - TJ = 125 °C - 150 - - 7 - - 9 - TJ = 25 °C - 200 - TJ = 125 °C - 520 - TJ = 25 °C - 55 - TJ = 125 °C - 95 - - 14 - - 19 - TJ = 25 °C - 350 - TJ = 125 °C - 960 - MIN. TYP. MAX. UNITS - - 2.3 °C/W - 2.0 - g 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 6 A, dIF/dt = 400 A/μs, VR = 400 V IF = 8 A, dIF/dt = 1000 A/μs, VR = 800 V UNITS ns A nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case SYMBOL TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range Marking device TJ, TStg Case style TO-220AC 2L E5TX0812 Revision: 30-Mar-2022 Document Number: 96607 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX0812-M3 Vishay Semiconductors 100 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C TJ = -40 °C 1 0.1 CT - Junction Capacitance (pF) IF - Instantaneous Forward Current (A) www.vishay.com 0 1.0 2.0 3.0 4.0 5.0 10 1 6.0 0 200 VF - Forward Voltage Drop (V) Allowable Solder Pad Temperature (°C) IR - Reverse Current (µA) TJ = 175 °C TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0 200 400 600 800 800 1000 1200 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1000 10 600 VR - Reverse Voltage (V) Fig. 1 - Forward Voltage Drop Characteristics 100 400 1000 1200 180 170 160 150 DC 140 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 0 VR - Reverse Voltage (V) 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) 35 30 RMS limit 25 20 D= 0.10 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 15 10 5 0 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Revision: 30-Mar-2022 Document Number: 96607 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX0812-M3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.75 0.50 0.33 0.25 0.20 0.10 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case 250 1200 TJ = 125 °C 1000 200 8 A, 800 V 800 Qrr (nC) trr (ns) 6 A, 400 V 150 8 A, 800 V 100 600 400 50 6 A, 400 V 200 TJ = 125 °C 0 0 100 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 25 TJ = 125 °C Irr (A) 20 15 8 A, 800 V 10 6 A, 400 V 5 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Recovery Current vs. dIF/dt Revision: 30-Mar-2022 Document Number: 96607 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX0812-M3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 0 t10 % 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 10 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E 5 T X 08 12 -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 - 4 5 - Package: T = TO-220AC 2L X = hyperfast recovery 6 - Current rating (08 = 8 A) 7 - Voltage rating (12 = 1200 V) 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-E5TX0812-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 30-Mar-2022 Document Number: 96607 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AB 3L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 14-Mar-2022 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 07-Mar-2022 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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