LS124_TO-71

LS124 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT124 The LS124 is a monolithic pair of Super-Beta NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS124 is a direct replacement for discontinued Intersil IT124. The hermetically sealed TO-71 is well suited for hi-rel and harsh environment applications. (See Packaging Information). LS124 Features: Very high gain Tight matching Low Output Capacitance FEATURES  Direct Replacement for INTERSIL IT124  HIGH  GAIN   LOW OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  2  5  ‐‐  MAX  5  15  0.6  UNITS  mV  µV/°C  nA  hFE ≥ 1500 @ 1 AND 10µA  ≤ 2.0pF  ≤ 5.0µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 1V  IC = 10µA, VCE = 1V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 1V  MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVCBO  Collector to Base Voltage  2  BVCEO  Collector to Emitter Voltage  2  BVEBO  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  100  hFE  DC Current Gain  1500  1500  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  CC1C2  Collector to Collector Capacitance  ‐‐  IC1C2  Collector to Collector Leakage Current  ‐‐  fT  Current Gain Bandwidth Product  100  NF  Narrow Band Noise Figure  ‐‐  Click To Buy TYP.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  0.5  100  100  2  2  10  ‐‐  3  UNITS  V  V  V  V      V  pA  pA  pF  pF  nA  MHz  dB  TO-71 (Bottom View) CONDITIONS  IC = 10µA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 02  IC = 10µA, IE = 0  IC = 1µA, VCE = 1V  IC = 10µA, VCE = 1V  IC = 1mA, IB = 0.1mA  IC = 0, VEB = 3V  IE = 0, VCB = 1V  IE = 0, VCB = 1V  VCC = 0V  VCC = ±50V  IC = 100µA, VCE = 1V  IC = 10µA,  VCE = 3V, BW=200Hz, RG= 10KΩ,   f = 1KHz  Notes:  1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.    Available Packages: LS124 in TO-71 LS124 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.