2N6343

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6342/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345) or Four Modes (2N6346, 2N6347, 2N6348, 2N6349) • For 400 Hz Operation, Consult Factory • 12 Ampere Devices Available as 2N6342A thru 2N6349A 2N6342 thru 2N6349 TRIACs 8 AMPERES RMS 200 thru 800 VOLTS MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = –40 to +110°C) 1/2 Sine Wave 50 to 60 Hz, Gate Open Symbol VDRM 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 (TC = +80°C) (TC = +90°C) IT(RMS) ITSM 200 400 600 800 8 4 100 Amps Amps Value Unit Volts *RMS On-State Current Full Cycle Sine Wave 50 to 60 Hz *Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by Rated Current Circuit Fusing (t = 8.3 ms) I2t PGM PG(AV) IGM VGM TJ Tstg 40 20 0.5 2 10 –40 to +125 –40 to +150 A2s Watts Watt Amps Volts °C °C *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current *Peak Gate Voltage *Operating Junction Temperature Range *Storage Temperature Range 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 2N6342 thru 2N6349 THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Symbol RθJC Max 2.2 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.) Characteristic *Peak Blocking Current (VD = Rated VDRM, gate open) TJ = 25°C TJ = 100°C *Peak On-State Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) All Types MT2(+), G(–) 2N6346 thru 49 MT2(–), G(–) All Types MT2(–), G(+) 2N6346 thru 49 *MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types *MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49 Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) All Types MT2(+), G(–) 2N6346 thru 49 MT2(–), G(–) All Types MT2(–), G(+) 2N6346 thru 49 *MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types *MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49 (VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C) *MT2(+), G(+); MT2(–), G(–) All Types *MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49 *Holding Current (VD = 12 Vdc, Gate Open) (IT = 200 mA) TC = 25°C *TC = –40°C Symbol IDRM — — — — 1.3 10 2 1.55 Min Typ Max Unit µA mA Volts mA p 2%) VTM IGT — — — — — — — VGT 12 12 20 35 — — 50 75 50 75 100 125 Volts — — — — — — 0.2 0.2 IH — — tgt — 0.9 0.9 1.1 1.4 — — — — 6 — 1.5 2 2.5 2 2.5 2.5 3 — — mA 40 75 2 µs *Turn-On Time (VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. dv/dt(c) — 5 — V/µs FIGURE 1 – RMS CURRENT DERATING 100 P(AV) , AVERAGE POWER (WATTS) TC , CASE TEMPERATURE ( °C) α = 30° 60° 90° 92 120° 180° 10 FIGURE 2 – ON-STATE POWER DISSIPATION dc α α 6.0 α = CONDUCTION ANGLE 60° 30° TJ 100°C α = 180° 120° 90° 96 8.0 88 α 84 80 0 1.0 α 4.0 [ α = CONDUCTION ANGLE 2.0 0 dc 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 2.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 7.0 8.0 2 Motorola Thyristor Device Data 2N6342 thru 2N6349 FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE 1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 QUADRANTS 0.6 0.4 –60 –40 1 2 3 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 I GT , GATE TRIGGER CURRENT (mA) OFF-STATE VOLTAGE = 12 V 50 OFF-STATE VOLTAGE = 12 V 30 20 1 2 QUADRANT 3 10 4 7.0 5.0 –60 –40 FIGURE 4 – TYPICAL GATE TRIGGER CURRENT –20 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 FIGURE 5 – ON-STATE CHARACTERISTICS 100 70 50 30 20 i TM, INSTANTANEOUS ON-STATE CURRENT (AMP) TJ = 100°C 10 7.0 5.0 3.0 2.0 25°C I H , HOLDING CURRENT (mA) 10 7.0 5.0 20 FIGURE 6 – TYPICAL HOLDING CURRENT GATE OPEN MAIN TERMINAL #1 POSITIVE MAIN TERMINAL #2 POSITIVE 3.0 2.0 –60 –40 –20 0 20 40 80 100 60 TJ, JUNCTION TEMPERATURE (°C) 120 140 FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT 100 ITSM , PEAK SURGE CURRENT (AMP) 1.0 0.7 0.5 0.3 0.2 80 60 CYCLE TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10 40 20 0 1.0 0.1 0.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.8 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 4.4 Motorola Thyristor Device Data 3 2N6342 thru 2N6349 FIGURE 8 – TYPICAL THERMAL RESPONSE 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.05 ZθJC(t) = r(t) • RθJC 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t,TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 4 Motorola Thyristor Device Data 2N6342 thru 2N6349 PACKAGE DIMENSIONS –T– B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 5 2N6342 thru 2N6349 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ *2N6342/D* Motorola Thyristor Device Data 2N6342/D