4N32

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number. VDE 0884 is a test option. Applications • Low Power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment • Portable Electronics • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 5 30 150 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 120 1.41 Volts mA mW mW/°C Symbol Value Unit GlobalOptoisolator™ 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * [CTR = 100% Min] [CTR = 50% Min] [CTR = 500% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 6 5 4 1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6–Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30. 2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 4 Motorola Optoelectronics Device Data © Motorola, Inc. 1995 1 4N29 4N29A 4N30 4N31 4N32 4N33 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED *Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) *Forward Voltage (IF = 10 mA) Capacitance (VR = 0 V, f = 1 MHz) OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted) *Collector–Emitter Dark Current (VCE = 10 V, Base Open) *Collector–Base Breakdown Voltage (IC = 100 µA, IE = 0) *Collector–Emitter Breakdown Voltage (IC = 100 µA, IB = 0) *Emitter–Collector Breakdown Voltage (IE = 100 µA, IB = 0) DC Current Gain (VCE = 5 V, IC = 500 µA) COUPLED (TA = 25°C unless otherwise noted) *Collector Output Current (3) 4N32, 4N33 (VCE = 10 V, IF = 10 mA) 4N29, 4N30 4N31 Isolation Surge Voltage(4,5) (60 Hz ac Peak, 1 Second) Isolation Resistance(4) (V = 500 V) *Collector–Emitter Saturation Voltage(3) (IC = 2 mA, IF = 8 mA) Isolation Capacitance(4) (V = 0 V, f = 1 MHz) Turn–On Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) Turn–Off Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31 4N32, 33 4N31 4N29, 4N30, 4N32, 4N33 4N29/A, 4N30, 31, 32, 33 *4N29, 4N32 *4N30, 4N31, 4N33 ICEO Symbol Min Typ(1) Max Unit µA Volts pF IR VF C — — — 0.05 1.34 1.8 100 1.5 — — 30 30 5 — — — — — 16K 100 — — — — nA Volts Volts Volts — V(BR)CBO V(BR)CEO V(BR)ECO hFE IC (CTR)(2) 50 (500) 10 (100) 5 (50) 7500 2500 1500 — — — — — — — — — — — 1011 — — 0.2 0.6 — — — — — — — 1.2 1 — 5 mA (%) VISO Vac(pk) RISO VCE(sat) CISO ton toff Ohms Volts pF µs µs — — 17 45 40 100 * Indicates JEDEC Registered Data. All Motorola 6–pin devices have VISO rating of 7500 Vac(pk). 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF x 100%. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common. 5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 6. For test circuit setup and waveforms, refer to Figure 11. p 2 Motorola Optoelectronics Device Data 4N29 4N29A 4N30 4N31 4N32 4N33 TYPICAL CHARACTERISTICS 2 VF, FORWARD VOLTAGE (VOLTS) 1.8 PULSE ONLY PULSE OR DC I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 NORMALIZED TO: IF = 10 mA TA = 25°C 1 1.6 1.4 TA = –55°C 25°C 100°C 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 1.2 1 0.1 TA = –55°C THRU +25°C +70°C +100°C 0.01 0.5 1 2 5 10 20 50 IF, LED INPUT CURRENT (mA) Figure 1. LED Forward Voltage versus Forward Current IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) Figure 2. Output Current versus Input Current 140 IC , COLLECTOR CURRENT (mA) 120 IF = 10 mA 100 80 5 mA 60 40 20 0 0 1 2 2 mA 1 mA 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 10 7 5 2 1 0.7 0.5 0.2 0.1 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 NORMALIZED TO TA = 25°C Figure 3. Collector Current versus Collector–Emitter Voltage VCE , COLLECTOR–EMITTER VOLTAGE (NORMALIZED) Figure 4. Output Current versus Ambient Temperature ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) 105 104 103 102 30 V 10 10 V 1 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) 80 100 NORMALIZED TO: VCE = 10 V NORMALIZED TO: TA = 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 –60 –40 NORMALIZED TO TA = 25°C –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 5. Collector–Emitter Voltage versus Ambient Temperature Figure 6. Collector–Emitter Dark Current versus Ambient Temperature Motorola Optoelectronics Device Data 3 4N29 4N29A 4N30 4N31 4N32 4N33 1000 VCC = 10 V 100 t, TIME (µs) RL = 1000 t, TIME (µs) 100 1000 RL = 1000 100 10 10 10 100 10 1 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 1 0.1 0.2 0.5 VCC = 10 V 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 7. Turn–On Switching Times 14 IC, TYPICAL COLLECTOR CURRENT (mA) 12 10 0.5 µA 8 0.4 µA 6 4 2 0 0 2 4 0.3 µA 0.2 µA 0.1 µA 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 20 1 0.01 IF = 0 100 Figure 8. Turn–Off Switching Times IB = 0.7 µA C, CAPACITANCE (pF) 0.6 µA CLED f = 1 MHz 10 CCB CEB CCE 0.1 1 V, VOLTAGE (VOLTS) 10 100 Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage TEST CIRCUIT VCC = 10 V IC = 50 mA RL IF = 200 mA INPUT PULSE WIDTH < 1 ms OUTPUT 10% WAVEFORMS INPUT PULSE OUTPUT PULSE 90% tr ton tf toff Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data 4N29 4N29A 4N30 4N31 4N32 4N33 PACKAGE DIMENSIONS –A– 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 –B– 1 3 F 4 PL N C L –T– SEATING PLANE K G J 6 PL 0.13 (0.005) TA M M E 6 PL D 6 PL 0.13 (0.005) M M TB M A M B M STYLE 1: PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 1 4 –B– 3 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 F 4 PL H C L –T– G E 6 PL D 6 PL 0.13 (0.005) M J K 6 PL 0.13 (0.005) TA M M SEATING PLANE TB M A M B M DIM A B C D E F G H J K L S CASE 730C–04 ISSUE D *Consult factory for leadform option availability Motorola Optoelectronics Device Data 5 4N29 4N29A 4N30 4N31 4N32 4N33 –A– 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 –B– 1 3 F 4 PL N C L –T– SEATING PLANE G D 6 PL K 0.13 (0.005) M J TA M E 6 PL B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Optoelectronics Device Data 4N29/D *4N29/D*