2SA2016-TD-E

Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor http://onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of FBET and MBIT processes • High-speed switching Low collector-to-emitter saturation voltage Ultrasmall package facilitales miniaturization in end products High allowable power dissipation ( )2SA2016 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO Emitter-to-Base Voltage Unit (-50)100 V (-50)100 V (--)50 V (--)6 V Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7008B-003 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 Packing Type: TD 4.0 1.5 2SA2016-TD-E 2SC5569-TD-E TD 3 Marking 0.4 0.4 2SA2016 0.75 LOT No. 3.0 FF AW 1.5 LOT No. 0.5 2SC5569 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View 1 PCP 1 3 2SA2016 Semiconductor Components Industries, LLC, 2013 September, 2013 2 3 2SC5569 13013 TKIM/72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259 No.6309-1/8 2SA2016 / 2SC5569 Continued from preceding page. Parameter Symbol Collector Current Conditions Ratings Unit (--)7 A Collector Current (Pulse) IC ICP (--)10 A Base Current IB (--)1.2 A 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 3.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE=(--)2V, IC=(--)500mA VCE(sat)2 Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ max 200 VCE=(--)10V, IC=(--)500mA VCE(sat)1 Collector-to-Emitter Saturation Voltage Ratings min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A fT Cob Output Capacitance Conditions (--)0.1 μA (--)0.1 μA 560 (290)330 VCB=(--)10V, f=1MHz IC=(--)3.5A, IB=(--)175mA MHz (50)28 IC=(--)2A, IB=(--)40mA IC=(--)2A, IB=(--)40mA Unit pF (--230)160 (--390)240 mV (--240)110 (--400)170 mV (--)0.83 (--)1.2 V IC=(--)10μA, IE=0A (--50)100 V V(BR)CES V(BR)CEO IC=(--)100μA, RBE=0Ω (--50)100 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V (40)30 ns (225)420 ns 25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SA2016-TD-E Device PCP 1,000pcs./reel 2SC5569-TD-E PCP 1,000pcs./reel memo Pb Free No.6309-2/8 2SA2016 / 2SC5569 IC -- VCE A m A --50m A m 0 4 ---30mA A 0m 0 --1 --20mA --3 --10mA --2 IB=0mA 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V 3 10mA 2 --5 --4 Ta= 75° 25°C C --25° C --3 --2 --1 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V IT00207 IC -- VBE 8 2SC5569 VCE=2V 7 Collector Current, IC -- A --6 IB=0mA 2SC5569 IT00206 2SA2016 VCE= --2V --7 Collector Current, IC -- A 20mA 4 0 0 --2.0 IC -- VBE --8 6 5 4 3 2 1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 --1.4 IT00208 7 5 100 7 5 Ta=75°C 3 25°C --25°C 2 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 0.01 5 7 --10 IT00210 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2016 IC / IB=20 3 2 --100 7 5 5°C Ta=7 °C --25 3 2 25°C --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00212 2SC5569 VCE=2V 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC --1000 1.4 IT00209 5 2 5 7 --0.1 1.2 7 3 3 1.0 100 2 2 0.8 hFE -- IC 5 3 10 --0.01 0.6 7 DC Current Gain, hFE Ta=75°C 25°C --25°C 2 0.4 1000 2SA2016 VCE= --2V 3 0.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 DC Current Gain, hFE 30mA Ta=7 5°C 25°C --25° C 0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 1 --1 7 5 60mA 50mA 40mA 80 6 --5 --4 70mA 90mA Collector Current, IC -- A --6 IC -- VCE 7 --90mA --80mA --70mA --60mA 100m A 2SA2016 Collector Current, IC -- A --7 5 7 10 IT00211 VCE(sat) -- IC 1000 7 5 2SC5569 IC / IB=20 3 2 100 7 5 5°C 3 2 7 Ta= C 25° C --25° 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00214 No.6309-3/8 2SA2016 / 2SC5569 VCE(sat) -- IC Ta = --1000 7 5 3 2 5°C --100 7 5 7 Ta= C 25° --25°C 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 7 3 2 Ta= --25°C 7 75°C 5 25°C 3 2 --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 2 100 7 5 5°C Ta=7 C --25° 3 2 2 3 5 7 0.1 2 C 25° 3 5 7 1.0 2 3 VBE(sat) -- IC 2SC5569 IC / IB=50 7 5 3 2 1000 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2SC5569 f=1MHz 3 Output Capacitance, Cob -- pF 100 7 5 3 2 10 7 5 5 7 10 IT00217 Cob -- VCB 5 2SA2016 f=1MHz 2 5 7 10 IT00215 Collector Current, IC -- A Cob -- VCB 3 3 2 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 5 3 2 100 7 5 3 2 10 5 7 1.0 2 3 5 7 10 2 3 5 IT00219 f T -- IC 2SC5569 VCE=10V 7 Gain-Bandwidth Product, f T -- MHz 5 3 1000 2SA2016 VCE= --10V 7 2 Collector-to-Base Voltage, VCB -- V IT00218 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 7 5 100 0.01 5 7 --10 IT00216 Collector Current, IC -- A 5 2 10000 2SA2016 IC / IB=50 --1000 3 Collector Current, IC -- A VBE(sat) -- IC --10000 2SC5569 IC / IB=50 10 0.01 5 7 --10 IT00213 Collector Current, IC -- A Output Capacitance, Cob -- pF Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 VCE(sat) -- IC 10000 7 5 2SA2016 IC / IB=50 --2 5° 25 C °C 75 °C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --10000 7 5 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00220 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00221 No.6309-4/8 2SA2016 / 2SC5569 ASO IC=7A 10 s ms DC 1.0 7 5 s 0μ 3 2 50 Collector Current, IC -- A 1m s 0μ 10 10 7 5 op era tio n 3 2 0.1 7 5 2SA2016 / 2SC5569 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 2 0.01 0.1 2 3 5 7 1.0 2 3 PC -- Ta 2.0 100ms ICP=10A Collector Dissipation, PC -- W 2 2SA2016 / 2SC5569 1.5 1.3 M ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ✕0 .8m m) 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT00222 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00223 PC -- Tc 4.0 2SA2016 / 2SC5569 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01535 No.6309-5/8 2SA2016 / 2SC5569 Bag Packing Specification 2SA2016-TD-E, 2SC5569-TD-E No.6309-6/8 2SA2016 / 2SC5569 Outline Drawing 2SA2016-TD-E, 2SC5569-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 3.7 2.2 1.0 1.8 1.5 1.0 1.5 3.0 No.6309-7/8 2SA2016 / 2SC5569 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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