FDN359AN

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description This N-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SuperSOTTM -8 SuperSOTTM -6 SOT-23 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SO-8 SOIC-16 SOT-223 D D 9A 35 S TM SuperSOT -3 G Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Maximum Drain Current - Continuous (Note 1a) - Pulsed PD TJ,TSTG S G Maximum Power Dissipation Ratings Units 30 V ±20 V 2.7 A 15 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Temperature Range -55 to 150 W °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W © 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDN359AN /D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV/ oC 23 TJ = 55°C 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V,VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.7 A 1.6 3 TJ =125°C VGS = 4.5 V, ID = 2.4 A V mV/ oC -4 0.037 0.046 0.055 0.075 0.049 0.06 15 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V A gFS Forward Transconductance VDS = 5 V, ID = 2.7 A 9.5 S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 480 pF 120 pF 45 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 5 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 2.7 A, VGS = 5 V 6 12 ns 13 24 ns 15 27 ns 4 10 ns 5 7 nC 1.4 nC 1.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note) 0.65 0.42 A 1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment : a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2 Typical Electrical Characteristics 4.5V 3.5V 6.0V 10 R DS(ON) , NORMALIZED I D , DRAIN-SOURCE CURRENT (A) VGS = 10V 8 3.0V 6 4 2 2.5V DRAIN-SOURCE ON-RESISTANCE 3 12 2.5 VGS = 3.0V 2 3.5V 4.0V 1.5 4.5V 6.0V 10V 1 0.5 0 0 0.5 1 1.5 2 0 2.5 2 4 12 I D = 1.3A I D = 2.7 A R DS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 0.15 1.6 VGS = 10 V 1.2 1 0.8 0.6 -50 0.12 0.09 TA = 125°C 0.06 TA = 25°C 0.03 0 -25 0 25 50 75 100 125 0 150 2 TJ , JUNCTION TEMPERATURE (°C) 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 I S , REVERSE DRAIN CURRENT (A) 12 VDS = 5V I D , DRAIN CURRENT (A) 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.4 6 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 9 6 3 TA = -55°C 25°C 125°C V GS = 0V 1 TA= 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 1 2 V GS 3 4 0 5 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , BODY DIODE FORWARD VOLTAGE (V) , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics 1000 I D = 2.7A V DS = 5V 10V 15V 8 500 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 C iss 200 C oss 100 50 f = 1 MHz V GS = 0V 2 20 0.1 0 0 2 4 6 8 10 0.2 1 2 5 10 30 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 50 30 N) S(O RD 1m s IT LIM 1 100 ms 1s 0.3 10s DC VGS = 10V SINGLE PULSE RθJA =270°C/W TA = 25°C 0.1 0.03 0.01 0.1 SINGLE PULSE RθJA =270° C/W TA = 25°C 40 10m s 3 POWER (W) 10 0.2 0.5 1 2 5 30 20 10 10 20 30 0 0.0001 50 0.001 0.1 1 10 100 300 Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE 0.01 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE 0.5 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) I D , DRAIN CURRENT (A) C rss 1 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 Single Pulse 0.005 Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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