KSP92BU

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSP92/93 KSP92/93 High Voltage Transistor TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSP92 : KSP93 -300 -200 V V : KSP92 : KSP93 -300 -200 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation (Ta=25°C) 625 mW 5 mW/°C Derate above 25°C PC Collector Power Dissipation (TC=25°C) 1.5 W Derate above 25°C 12 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP92 : KSP93 Test Condition IC= -100µA, IE=0 * Collector-Emitter Breakdown Voltage : KSP92 : KSP93 IC= -1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 ICBO Collector Cur-off Current BVCEO : KSP92 : KSP93 Min. Max. -300 -200 V V -300 -200 V V -5 V VCB= -200V, IE=0 VCB= -160V, IE=0 -0.25 -0.25 µA µA -0.10 µA V IEBO Emitter Cut-off Current VEB= -3V, IC=0 hFE * DC Current Gain VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE (sat) *Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.50 VBE (sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.90 fT Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=100MHz Cob Output Capacitance : KSP92 : KSP93 VCB= -20V, IE=0 f=1MHz Units 25 40 25 50 V MHz 6 8 pF pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP92/93 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -10V 100 10 1 -1 -10 -100 -1000 -10000 IC = 10 IB VBE(sat) -1000 V CE(sat) -100 -10 -1 IC[mA], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Saturation Voltage 100 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Cib [pF], Cob [pF], CAPACITANCE -10 Cib 10 Cob 1 -0.1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE VCE = -20V f = 100MHz 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 3. Capacitance Figure 4. Current Gain Bandwidth Product µ 100 s s 1m dc -100 KSP93 1.5 WATT THERMAL LIMITATION@T C=25℃ 625mW THERMAL KSP92 IC[mA], COLLECTOR CURRENT -500 LIMITATION@T A=25℃ BONDING WIRE LIMITATION -10 SECOND BREAKDOWN LIMITATION T j=150℃ -5 -3 -10 -100 -400 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Active-Regio Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP92/93 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. 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